Title of Invention

COMPACT POWER SEMICONDUCTOR MODULE HAVING A CONNECTING DEVICE

Abstract

The invention describes a power semiconductor module having a housing, a substrate with conductor tracks and power semiconductor components which are arranged on the latter, and having a connecting device. The latter comprises a film composite comprising a first and a second conductive layer, which are respectively patterned per se and thus form conductor tracks, and an insulating layer which is arranged between the first and second conductive layers. The first conductive layer has first contact devices, in the form of spot-welded joints, for power connecting areas of power semiconductor components, second contact devices for control connecting areas of power semiconductor components as well as third contact devices for the load connection to a printed circuit board. The second conductive layer has a connection to the first conductive layer and fourth contact devices for the control connection to a printed circuit board. The film composite also has film sections between the first and second contact devices and between the third and fourth contact devices, which are arranged in guide sections of the housing.

Full Text

FORM 2 THE PATENT ACT 1970 (39 of 1970) & The Patents Rules, 2003 COMPLETE SPECIFICATION (See Section 10, and rule 13) 1. TITLE OF INVENTION COMPACT POWER SEMICONDUCTOR MODULE HAVING A CONNECTING DEVICE 2. APPLICANT(S) a) Name b) Nationality c) Address SEMIKRON ELEKTRONIK GMBH & CO. GERMAN Company POSTFACH 820251, 90253 NURNBERG, GERMANY KG 3. PREAMBLE TO THE DESCRIPTION The following specification particularly describes the invention and the manner in which it is to be performed : - IN THE MATTER OF an Application for a German Patent in the name of SEMIKRON Elektronik GmbH & Co. KG filed under No. 10 2006 013 078.2, and IN THE MATTER OF an Application for an Indian Patent. I, Sharon Elizabeth GIBSON BA, translator to RWS Group Ltd, of Europa House, Marsham Way, Gerrards Cross, Buckinghamshire, England, do solemnly and sincerely declare that I am conversant with the English and German languages and am a competent translator thereof, and that the following is, to the best of my knowledge and belief, a true and correct translation of the Patent Application filed under No. 10 2006 013 078.2 by SEMIKRON Elektronik GmbH & Co. KG in Germany on 14 March 2006 for "Compact power semiconductor module having a connecting device" Date: 30 January 2007 S. E. GIBSON For and on behalf of RWS Group Ltd Description The invention describes a compact power semiconductor module having a connecting device for electrically connecting the load and control terminals of power semiconductor components to an external printed circuit board. In this case, the term "load connection" is intended to be used below to mean a connection between a contact device of the power semiconductor module and an external line element, meaning the load terminals, that is to say the DC inputs of the intermediate circuit and the AC output in a half-bridge circuit, for example. In a similar manner, the term "control connection" is used below to mean the connection between an auxiliary or control terminal of the power semiconductor module and an external control terminal element. Power semiconductor modules as disclosed, for example, in DE 10 2004 0255 609 Al or DE 103 55 925 Al form a starting point of the invention. The document mentioned first discloses a power semiconductor module with screw pressure contacting. The load connection between the power semiconductor module and a printed circuit board is achieved, in this case, by means of a screw connection according to the prior art. In this case, the control connections of the auxiliary or control terminals are in the form of a connection between a spring contact element and a conductor track section of the printed circuit board. According to the invention, pressure is introduced into the control connection by means of the arrangement and screw connection of the printed circuit board to the load terminal elements. The configuration of a power semiconductor module of the type mentioned is particularly suitable for current loadings above 10 amperes. DE 103 55 925 Al discloses a connecting device for power semiconductor components comprising a film composite of a first and a second conductive film with an insulating intermediate layer. The power semiconductor components are electrically connected to the first conductive layer in a permanently reliable manner 2 by means of ultrasonic welding. The module-internal connection of the power semiconductor components, which is suitable for the circuit and comprises both the load and control terminals, is disclosed in said document. However, said document does not disclose any details of the load and control connections for external connection. The invention is based on the object of presenting a power semiconductor having a connecting device in the form of a film composite, said power semiconductor being simple to produce and having compact dimensions, and it being possible to arrange both the load terminals and the control terminals on a printed circuit board. According to the invention, the object is achieved by means of the measures of the features of Claim 1. Preferred embodiments are described in the subclaims. The inventive concept is based on a power semiconductor module having a housing and at least one substrate with conductor tracks and power semiconductor components which are arranged on these conductor tracks in a manner suitable for the circuit. The power semiconductor module also has at least one connecting device which respectively comprises a film composite comprising a first (60) and a second (64) conductive layer with an insulating layer which is arranged between these conductive layers. The respective conductive layers are patterned per se and thus form conductor tracks. It is preferred for individual conductor tracks of the two conductive layers to be connected to one another by means of a connection which is suitable for the circuit, for example in the form of pressure contact connections. The first conductive layer of the film composite has first contact devices, in the form of spot-welded joints, for power connecting areas of power semiconductor components. This first conductive layer also preferably has second contact devices for control connecting areas of power semiconductor components on a further 3 conductor track. Furthermore, this first conductive layer has third contact devices for the load connection to a printed circuit board. The second conductive layer has fourth contact devices for the control connection to the printed circuit board. The film composite has film sections between the first and second contact devices and between the third and fourth contact devices, which are arranged in guide sections of the housing, the third and fourth contact devices having parallel area normals. The inventive solution is explained further with reference to the exemplary embodiments of Figs. 1 to 4. Fig. 1 shows, in section, a first configuration of an inventive power semiconductor module. Fig. 2 shows a three-dimensional view of a first configuration of an inventive power semiconductor module. Fig. 3 shows, in section, a second configuration of an inventive power semiconductor module. Fig. 4 shows the film composite of the second configuration of an inventive power semiconductor module. Fig. 1 shows, in section, a first configuration of an inventive power semiconductor module in an arrangement with a heat sink and a printed circuit board. The power semiconductor module comprises a housing (3) which surrounds a substrate (5) in such a manner that the latter partially projects beyond that side of the housing which faces away from the inside of the power semiconductor module. The heat sink is arranged on this side of the electrically insulating substrate and is thermally conductively connected to the substrate. 4 That side of the substrate which faces the inside of the power semiconductor module is in the form of a plurality of conductor tracks (54) which are electrically insulated from one another. A plurality of power semiconductor components (58 a/b) are arranged on these conductor tracks in a manner suitable for the circuit and are electrically conductively connected. Furthermore, the power semiconductor module has a connecting device (6) which comprises a film composite. This film composite is formed from a first (60) and a second (64) conductive layer, which are respectively patterned per se and thus form conductor tracks, and an insulating layer (62) which is arranged between the first and second conductive layers. The first conductive layer (60) of this film composite has first contact devices (600), in the form of spot-welded joints, for power connecting areas (580) of power semiconductor components (58 a/b). It also has second contact devices (582) for control connecting areas (582) of the power semiconductor components (58a). The first conductive layer and its conductor tracks, with the contact devices, thus form the connection - which is suitable for the circuit - of those connecting areas of the power semiconductor components (58 a/b) which face away from the substrate. The volume between the substrate (5) with the power semiconductor components (58) and the first conductive layer (60) is filled with an insulating material for reasons of electrical safety, this insulating material preferably being a silicone gel or an epoxy resin (584). The first conductive layer furthermore has third contact devices (604) for the load connection (70) to a printed circuit board (7). These third contact devices are electrically conductively connected to first contact devices and thus to the load connecting areas of the associated power semiconductor component. The second conductive layer (64) has a connection (66) - which is suitable for the circuit - to the first conductive layer (60) in order, for example, to connect the control 5 connecting areas (582) of the power semiconductor components (58a) to fourth contact devices (606) for the control connection (72) to a printed circuit board (7). It is preferred for the third and fourth contact devices to be respectively arranged in a row. To this end, the power semiconductor module has guide sections (30) inside the housing (30), in which film sections of the film composite are arranged. These film sections form the connection between the first and second contact devices (600, 602) and between the third and fourth contact devices (604,606). In order to form said configuration of the power semiconductor module, the film section for third contact devices (604) has a first bending point and a second bending point (68b) with the same bending direction. In contrast, the film section for fourth contact devices (606) has a first bending point (68a) with a first bending direction and, further along, a second bending point (68b) with an opposite second bending direction. In this case, the bending points (68 a/b) are arranged on associated edges (32) of the guide sections (30) of the housing (3). As a result of this configuration, both the third and the fourth contact devices are arranged in a plane determined by the printed circuit board with which contact is to be made. The contact devices thus likewise form areas with parallel area normals. The housing is designed in such a manner that the third contact devices (604) and fourth contact devices (606) project beyond the housing (3) in the direction of their area normals, and a soldered connection to the printed circuit board is thus possible. Fig. 2 shows a three-dimensional view of a first configuration of an inventive power semiconductor module with a housing (3) in Fig. 2a and without a housing (3) in Fig. 2b. A substrate (5) having power semiconductor components (58) is illustrated in this case. These power semiconductor components (58) are connected, in a manner suitable for the circuit, by means of a connecting device (6) which comprises a first conductive film layer (60) which is patterned per se and forms conductor tracks. Furthermore, this connecting device comprises an insulating film layer (62) and a 6 further film layer (64) which is arranged on the insulating film layer, is likewise patterned per se and forms conductor tracks, the respective profile of the conductor tracks on the second film layer (64) only being indicated in Fig. 2b. Film sections of this connecting device (6) with conductor tracks formed thereon reach through guide sections (30) of the housing (3) and are arranged on that side of the housing which faces away from the substrate (5) in such a manner that the contact devices (604, 606) for the load and control connection to a printed circuit board form a plane and have parallel area normals. To this end, the film section for third contact devices (604) has a first bending point and a second bending point (68b) with the same bending direction, whereas the film section for fourth contact devices (606) has a first bending point (68a) with a first bending direction and, further along, a second bending point (68b) with an opposite second bending direction. According to the invention, the respective third contact devices (604) are in the form of partial sections of conductor tracks of the first conductive layer (60), and the fourth contact devices (606) are in the form of partial sections of conductor tracks of the second conductive layer (64). Fig. 3 shows, in section, a second configuration of an inventive power semiconductor module in an arrangement with a heat sink and a printed circuit board. The configuration of the substrate with the arranged heat sink and power semiconductor components corresponds to that shown in Fig. 1, the heat sink being supported in this case on a special shaped portion (36) of the housing. The connecting device (6) likewise comprises the film composite (already described) of a first (60) and a second (64) conductive layer and an insulating layer (62) arranged between the first and second conductive layers. The first and second contact devices (600, 602) for connecting areas (580, 582) of power semiconductor components (58 a/b) are likewise in the form of spot-welded joints. 7 The housing (3) surrounds the substrate (5) and has a guide section (30) for arranging a film section between the first and second contact devices (600, 602) and between the third and fourth contact devices (604, 606) for the purpose of making contact with a printed circuit board (7). This film section for third contact devices (604) has a bending point (68c) with a first bending direction, and the film section for fourth contact devices (606) has a second bending point (68d) with a second bending direction. This again results in the third contact devices (604) and fourth contact devices (606) being arranged in a plane, which is, however, perpendicular to the plane of the substrate in this case, and the area normals of the contact devices (604, 606) again being arranged in a parallel manner. The detailed configuration of the connecting device is illustrated in Fig. 4. Fig. 4 shows the film composite (with indicated power semiconductor components, for example MOSFETs) of the connecting device according to the second configuration of an inventive power semiconductor module shown in Fig. 3. In Fig. 4a, a load connection side is formed by the first conductive layer and the insulating layer of the film composite. The insulating layer (62) is in the form of an area having lugs (620a) which are formed integrally with the area. These lugs (620a) form, together with conductor tracks of the first film layer, first film sections for arrangement in a guide shaft of the power semiconductor module. In this case, parts of the conductor tracks form the third contact device (604) shown in Fig. 3. In order to form the perpendicular arrangement of these contact devices (604) relative to the plane of the substrate, the film composite has a first bending point (68c). Fig. 4b illustrates a control connection side from the same viewing direction as in Fig. 2A. This control connection side is formed by the second conductive layer and the insulating layer of the film composite. The insulating layer (62) is, in turn, in the form of an area having lugs (620b) which are integrally formed with the area. These lugs (620b) form, together with conductor tracks of the second film layer, second film sections for arrangement in a guide shaft of the power semiconductor module. In this case, parts of the conductor tracks form the fourth contact device (606) shown in 8 Fig. 3. In order to form the perpendicular arrangement of these contact devices (604) relative to the plane of the substrate, the film composite has a second bending point (68d). As a result of the different bending directions of the first bending point (68c) and of the second bending point (68d), the contact devices (604, 606) are formed on a plane with respective parallel area normals, as illustrated in Fig. 3. 9 WE CLAIM: 1. Power semiconductor module (1) having a housing (3), at least one substrate (5) with conductor tracks (54) and power semiconductor components (58 a/b) which are arranged on the latter in a manner suitable for the circuit, and having a connecting device (6), the connecting device (6) comprising a film composite comprising a first (60) and a second (64) conductive layer, which are respectively patterned per se and thus form conductor tracks, and an insulating layer (62) which is arranged between the first and second conductive layers, the first conductive layer (60) having first contact devices (600), in the form of spot-welded joints, for power connecting areas (580) of power semiconductor components (58 a/b), second contact devices (582) for control connecting areas (582) of power semiconductor components (58a) as well as third contact devices (604) for the load connection (70) to a printed circuit board (7), the second conductive layer (64) having a connection (66), which is suitable for the circuit, to the first conductive layer (60) and fourth contact devices (606) for the control connection (72) to a printed circuit board (7), the film composite having film sections between the first and second contact devices (600, 602) and between the third and fourth contact devices (604, 606), which are arranged in guide sections (30) of the housing (30), and the third and fourth contact devices (604,606) having parallel area normals. 2. Power semiconductor module according to Claim 1, a film section for third contact devices (604) having a first bending point (68b) and a second bending point (68b) with the same bending direction, and a film section for fourth contact devices (606) having a first bending point (68a) with a first bending direction and, further along, a second bending point (68b) with an opposite second bending direction. 10 3. Power semiconductor module according to Claim 1, a film section for third contact devices (604) having a bending point (68c) with a first bending direction, and a film section for fourth contact devices (606) having a second bending point (68d) with a second bending direction. 4. Power semiconductor module according to Claim 3 or 4, the bending points (68 a/b/c/d) being arranged on associated edges (32) of the guide sections (30) of the housing (3). 5. Power semiconductor module according to Claim 1, the third contact devices (604) being in the form of partial sections of conductor tracks of the first conductive layer (60), and the fourth contact devices (606) being in the form of partial sections of conductor tracks of the second conductive layer (64). 6. Power semiconductor module according to Claim 1, the third contact devices (604) and fourth contact devices (606) projecting beyond the housing (3) in the direction of their area normals. 7. Power semiconductor module according to Claim 2, the third contact devices (604) and fourth contact devices (606) being arranged in a plane parallel to the plane of the substrate. 8. Power semiconductor module according to Claim 3, the third contact devices (604) and fourth contact devices (606) being arranged in a plane perpendicular to the plane of the substrate. 9. Power semiconductor module according to Claim 1, the volume between the substrate (5) with the power semiconductor components (58) and the first conductive layer (60) being filled with an insulating material. 11 10. Power semiconductor module according to Claim 9, the insulating material being a silicone gel or an epoxy resin (584). Dated this 15th day of February, 2007 12 Abstract The invention describes a power semiconductor module having a housing, a substrate with conductor tracks and power semiconductor components which are arranged on the latter, and having a connecting device. The latter comprises a film composite comprising a first and a second conductive layer, which are respectively patterned per se and thus form conductor tracks, and an insulating layer which is arranged between the first and second conductive layers. The first conductive layer has first contact devices, in the form of spot-welded joints, for power connecting areas of power semiconductor components, second contact devices for control connecting areas of power semiconductor components as well as third contact devices for the load connection to a printed circuit board. The second conductive layer has a connection to the first conductive layer and fourth contact devices for the control connection to a printed circuit board. The film composite also has film sections between the first and second contact devices and between the third and fourth contact devices, which are arranged in guide sections of the housing. To, The Controller of Patents, The Patent Office, Mumbai Fig. 2a 13 (Fig. 2a)

Documents:

305-MUM-2007-ABSTRACT(2-3-2010).pdf

305-mum-2007-abstract.doc

305-mum-2007-abstract.pdf

305-MUM-2007-CANCELLED PAGES(2-3-2010).pdf

305-MUM-2007-CLAIMS(AMENDED)-(16-4-2010).pdf

305-MUM-2007-CLAIMS(AMENDED)-(2-3-2010).pdf

305-mum-2007-claims.doc

305-mum-2007-claims.pdf

305-mum-2007-correspondance-received.pdf

305-MUM-2007-CORRESPONDENCE(2-3-2010).pdf

305-mum-2007-description (complete).pdf

305-MUM-2007-DRAWING(2-3-2010).pdf

305-mum-2007-drawings.pdf

305-MUM-2007-FORM 3(2-3-2010).pdf

305-MUM-2007-FORM 5(2-3-2010).pdf

305-mum-2007-form-1.pdf

305-mum-2007-form-18.pdf

305-mum-2007-form-2.doc

305-mum-2007-form-2.pdf

305-mum-2007-form-26.pdf

305-mum-2007-form-3.pdf

305-mum-2007-form-5.pdf

305-MUM-2007-PETITION UNDER RULE 137(2-3-2010).pdf

305-MUM-2007-REPLY TO EXAMINATION REPORT(2-3-2010).pdf

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