Title of Invention	" A PROCESS OF PREPARATION OF CADMIUM SULPHIDE/GLASS NANOCOMPOSITE CONTAINING CDS QUANTUM DOTS"
Abstract	This invention relates to Cadmium sulphide/glass nanocomposite containing CdS quantum dots comprising of for example 60%by wt. of SiO2, 6% by wt. of Na20, 15.5% by wt. of K2O, 8% by wt. of ZnO, 3% by wt. of B2O3, 2% by wt. of Ti02, 5.5% by wt. of BaO and 0.5-1% by wt. of a dopant such as CdS and also this relates to a process for preparation of cadmium sulphide/glass nanocomposite containing CdS quantum dots as claimed in claim 1 comprising steps of heating a mixture containing CdS to obtain molten glass, which is subjected to step of quenching followed by annealing.

Title of Invention

" A PROCESS OF PREPARATION OF CADMIUM SULPHIDE/GLASS NANOCOMPOSITE CONTAINING CDS QUANTUM DOTS"

Abstract

This invention relates to Cadmium sulphide/glass nanocomposite containing CdS quantum dots comprising of for example 60%by wt. of SiO2, 6% by wt. of Na20, 15.5% by wt. of K2O, 8% by wt. of ZnO, 3% by wt. of B2O3, 2% by wt. of Ti02, 5.5% by wt. of BaO and 0.5-1% by wt. of a dopant such as CdS and also this relates to a process for preparation of cadmium sulphide/glass nanocomposite containing CdS quantum dots as claimed in claim 1 comprising steps of heating a mixture containing CdS to obtain molten glass, which is subjected to step of quenching followed by annealing.

Full Text	STATEMENT OF INVENTION According to this invention there is provided Cadmium sulphide/glass nanocomposite containing CdS quantum dots comprising of for example 60%by wt. of SiO2, 6% by wt. of Na20, 15.5% by wt. of K2O, 8% by wt. of ZnO, 3% by wt. of B2O3, 2% by wt. of TiO2, 5.5% by wt. of BaO and 0.5-1% by wt. of a dopant such as CdS. Further according to this invention there is provided a process for preparation of cadmium sulphide/glass nanocomposite containing CdS quantum dots as claimed in claim 1 comprising steps of heating a mixture containing CdS to obtain molten glass, which is subjected to step of quenching followed by annealing. BRIEF DESCRIPTION OF THE ACCOMPANYING DRAWINGS Further objects and advantages of this invention will be more apparent from the ensuing description when read in conjunction with the accompanying drawings and wherein: Fig. 1 shows: the UV-visible spectra of as prepared sample and samples heat treated at various temperatures. Fig. 2 & 3 shows: uniformly distributed spherical nanoparticles. WE CLAIM: 1. A process for preparation of cadmium sulphide/glass nanocomposite containing CdS quantum dots comprising steps of:- a) heating in a furnace at 1100-1300°C mixture containing CdS to obtain molten glass, followed by soaking for 2-3 hrs; b) subjecting the molten glass to the step of quenching in a preheated mould of 550-580°C to obtain solid glass; c) annealing the solid glass in another furnace at 550-600°C for the growth of semi conductor nanocrystals into the matrix, a cooling at 2-5 c/minute. 2. A process as claimed in claim 1, wherein the mixture comprising of quartz, Na2CO3, 0.5-1% of K2CO3, ZnO, H3BO3, BaCo3, TiO2 and CdS, uniform mixing of which is carried out such as for 12hrs. 3. A process as claimed in claim 1, wherein the crystal growth takes place at 575-600°C. 4. A process as claimed in claim 1, wherein Cadmium sulphide glass nanocomposite containing CdS quantum dots comprising of 60% by wt. of SiO2, 6% by wt. of Na2O, 15.5% by wt. of K2O, 8% by wt. of ZnO, 3% by wt. of B2O3, 2% by wt. of TiO2, 5.5% by wt. of BaO and 0.5-1% by wt. of a dopant such as CdS.

Full Text

STATEMENT OF INVENTION
According to this invention there is provided Cadmium sulphide/glass nanocomposite containing CdS quantum dots comprising of for example 60%by wt. of SiO2, 6% by wt. of Na20, 15.5% by wt. of K2O, 8% by wt. of ZnO, 3% by wt. of B2O3, 2% by wt. of TiO2, 5.5% by wt. of BaO and 0.5-1% by wt. of a dopant such as CdS.
Further according to this invention there is provided a process for preparation of cadmium sulphide/glass nanocomposite containing CdS quantum dots as claimed in claim 1 comprising steps of heating a mixture containing CdS to obtain molten glass, which is subjected to step of quenching followed by annealing.
BRIEF DESCRIPTION OF THE ACCOMPANYING DRAWINGS
Further objects and advantages of this invention will be more apparent from the ensuing description when read in conjunction with the accompanying drawings and wherein:
Fig. 1 shows: the UV-visible spectra of as prepared sample and samples heat treated at various temperatures.
Fig. 2 & 3 shows: uniformly distributed spherical nanoparticles.

WE CLAIM:
1. A process for preparation of cadmium sulphide/glass nanocomposite
containing CdS quantum dots comprising steps of:-
a) heating in a furnace at 1100-1300°C mixture containing CdS to obtain molten glass, followed by soaking for 2-3 hrs;
b) subjecting the molten glass to the step of quenching in a preheated mould of 550-580°C to obtain solid glass;
c) annealing the solid glass in another furnace at 550-600°C for the growth of semi conductor nanocrystals into the matrix, a cooling at 2-5 c/minute.

2. A process as claimed in claim 1, wherein the mixture comprising of quartz, Na2CO3, 0.5-1% of K2CO3, ZnO, H3BO3, BaCo3, TiO2 and CdS, uniform mixing of which is carried out such as for 12hrs.
3. A process as claimed in claim 1, wherein the crystal growth takes place at 575-600°C.
4. A process as claimed in claim 1, wherein Cadmium sulphide glass nanocomposite containing CdS quantum dots comprising of 60% by wt. of SiO2, 6% by wt. of Na2O, 15.5% by wt. of K2O, 8% by wt. of ZnO, 3% by wt. of B2O3, 2% by wt. of TiO2, 5.5% by wt. of BaO and 0.5-1% by wt. of a dopant such as CdS.

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Patent Number

255382

Indian Patent Application Number

2414/DEL/2006

PG Journal Number

08/2013

Publication Date

22-Feb-2013

Grant Date

16-Feb-2013

Date of Filing

06-Nov-2006

Name of Patentee

THE SECRETARY,DEPARTMENT OF INFORMATION TECHNOLOGY,MINISTRY OF COMMUNICATION & INFORMATION TECHNOLOGY AND CENTRE FOR MATERIALS FOR ELECTRONICS TECHNOLOGY

Applicant Address

GOVT OF INDIA, ELECTRONICS NIKETAN 6,CGO COMPLEX NEW DELHI -11003.

Inventors:

#	Inventor's Name	Inventor's Address
1	BHARAT B.KALE	CENTER FOR MATERIALS FOR TECHNOLOGY (C-MET) PANCHWATI OFF PASHAN ROAD PUNE-411008
2	SANJAY K. APTE	CENTER FOR MATERIALS FOR TECHNOLOGY (C-MET) PANCHWATI OFF PASHAN ROAD PUNE-411008
3	RAVINDRA S.SONAWANE	CENTER FOR MATERIALS FOR TECHNOLOGY (C-MET) PANCHWATI OFF PASHAN ROAD PUNE-411008
4	SONALI D.NALK	CENTER FOR MATERIALS FOR TECHNOLOGY (C-MET) PANCHWATI OFF PASHAN ROAD PUNE-411008

PCT International Classification Number

C03C17/34

PCT International Application Number

N/A

PCT International Filing date

PCT Conventions:

#	PCT Application Number	Date of Convention	Priority Country
1			NA