Title of Invention

METHOD OF CLEANING A SUBSTRATE

Abstract Method for the continuous vacuum cleaning of a substrate, comprising; a species, which is oxygen is chosen that has a low sputtering efficiency and is chemically active with regard to the soiling matter; preparing a gas mixture comprising predominantly the oxygen species having a low sputtering efficiency and containing substantially no Argon; using at least one linear ion source, wherein a plasma is generated from said gas mixture and wherein the linear ion source generates a collimated beam of ions; at least one surface portion of said substrate optionally associated with a layer is subjected to said plasma so that said ionized species at least partly eliminates, by chemical reaction, the soiling matter possibly adsorbed or located on said surface portion, without removing material from the surface of the substrate.
Full Text

METHOD OF CLEANING A SUBSTRATE
The present invention relates to a method of cleaning a
substrate. It relates more particularly to cleaning
methods intended to be incorporated within a thin-film
deposition installation and operating in a vacuum, such
installations being of industrial size (substrates
having dimensions perpendicular to the direction of
movement of greater than 1.5m, or even 2 m). The
invention also relates to the substrates thus cleaned
and coated with a multilayer consisting of layers
having different functionalities (solar control, low
emissivity, electromagnetic shielding, heating,
hydrophilic, hydrophobic and photocatalytic layers),
layers modifying the level of reflection in the visible
(antireflection or mirror layers) that incorporate an
active system (electrochromic, electroluminescent or
photovoltaic layers).
Conventionally, the known cleaning methods within
installations for depositing thin films on substrates,
especially glass substrates, conventionally a cathode
sputtering deposition- line, employ substrate washing,
brushing and rinsing techniques within washing machines
specifically designed for this application.
The substrates are removed from a storage rack by an
appropriate device (a handling robot provided with
gripping members (suction cups) and are placed on a
train of conveyor rollers that transfer them into a
chamber, placed upstream of the actual deposition
chamber, within which first chamber the substrates
undergo, occasionally, several washing, brushing,
rinsing and drying cycles, each of these cycles
differing from the others, especially by a particular
choice of the quality of the brushes, water,
surfactants and cycle time, all of these cycles being
intended to make the surface of the substrate as clean
as possible and as free as possible of soiling matter

from various sources.
However, despite the greatest care taken when
implementing this cleaning method, it is still capable
of improvement with a constant concern for improving
the quality of cleaning on a small scale, the aim being
to reduce the number of flaws that result in the
substrate being scrapped, after thin films have been
deposited, and before or after an optional toughening,
curving or bending heat treatment has been carxied out.
These residual flaws come from several sources:
- (i) traces from suction cups (residues of
silicon or neoprene, depending on the material of the
suction cupT, traces of cutting oil, various types of
soiling matter, especially of organic origin, dust, S02
and zinc residues (SO2 and Zn come from treatments for
protecting" the glass at the end of the float line) ,
traces from gloves (in particular gloves for fixed
measurements), residues of Lucile (a PMMA), organic or
inorganic residues, such as those deposited on the
glass in order to protect the glass surface from
iridescence (for example, zinc citrate); and
- (ii) accidental drying of the rinsing water from
the washing machine and/or of surfactants (especially
cationic surfactants) that are adsorbed on the surface
of the glass (in the case of use in the washing
machine).
In case (i), the residues, the sizes of which vary from
a few nanometers to several microns in thickness, are
invisible on the glass but are revealed by the
subsequent deposition of a thin-film multilayer, the
total thickness of which remains very much less than
the mean thickness of any soiling. This residue causes
in particular poor adhesion of the coating at the flaw,
resulting in delamination of the coating and thus
exposing the peripheral portion of the flaw to
atmospheric corrosion (especially in the case of the

silver layers). This is also' particularly true in the
case of coatings that have to undergo a heat treatment,
since the residues either oxide (purely organic soiling
case) or diffuse into the coating (partially inorganic
soiling case) thereby resulting in an unacceptable
corrosion of the multilayer by dewetting of the silver
or by delamination of the dielectric layers.
The main consequence of this is that the substrate is
scrapped since the flaw has a size greater than the
acceptable critical size.
In case (ii), since the residues of the mineral salt
precipitation type resulting from the drying of a
droplet have a substantial conductivity, the presence
of a large quantity of organic molecules or of water
adsorbed on the surface of the glass causes, in
particular in the case of the coatings that have to
undergo a heat treatment, flaws of the haze type or
corrosion spots that are unacceptable, especially after
the heat treatment. Here again, the substrate and its
multilayer are destroyed.
This phenomenon, namely the presence of molecules
adsorbed on the surface of the, substrate, is all the
more critical the higher the run speed of the
substrate. Specifically, this glass surface speed per
unit time may reach or even exceed 5 m/min, hence
substantial quantities of adsorbed molecules entering
the line, with a potential partial pressure of the
molecules that is also high. The effect of the
deposition process will be to release these molecules
within the installation. Thus, in the case of water
adsorption (which is the most frequent case), it is
particularly well known that water vapor molecules are
very difficult to remove via a pumping system. Too high
a water partial pressure results in uncontrollable
modifications of the coatings and of the deposition
conditions (variation in the sputtering efficiency,

lack of inter-layer adhesion, modification of the
refractive indices, etc.).
To remedy the drawbacks of the conventional washing
techniques, techniques for washing the substrates under
vacuum have been developed.
Thus, for example, document US 6 002 208 (Keem and
Maishev) discloses a method of cleaning and/or or
etching a substrate using a linear ion source. This
document teaches the fact that it is possible to
remove, over the width of the substrate, a significant
thickness of the thickness of the substrate, this being
sputtered by a device of the linear ion source type
operating at reduced pressure (a few mtorr) using argon
as carrier gas. There are three major drawbacks when
implementing this process:
(i) the use of argon, which is known to be a very
effective sputtering gas in terms of efficiency, will
cause undesirable erosion of the ion source cathode
(generally containing, at least partially, iron). The
contaminant thus produced will be sputtered onto the
surface of the substrate and will add additional
pollution before deposition. Since the material
deposited is principally metallic, it will incompletely
wet the surface of the substrate and thus collect in
the form of nodules. These nodules may cause flaws in
the thin-film multilayers, especially after heat
treatment, and also may lead to premature wear of the
cathode, and therefore variations in the operating
conditions of this cathode;
(ii) the sputtering of a large amount of materials
coming from the substrate will cause a layer of these
materials to appear throughout the environment of the
ion source. In the case of glass, this redeposition
layer is insulating, and it constitutes a barrier
between the plasma and the electrically grounded walls,
thereby causing the appearance of a space charge
(including on the source) which may result in

electrical instabilities that are detrimental to the
stability of the process and to the lifetime of the
equipment (high maintenance costs); and
(iii) the sputtering over a certain thickness of
the material forming the substrate will modify the
chemical composition of the uppermost surface of the
substrate. It is known that the various constituents of
a substrate made of float glass (Si, Na, Ca, 0, Mg
etc.) have different sputtering coefficients. Thus, it
has been demonstrated that bombarding the glass with a
high-energy (> 1 keV) argon beam increases the surface
concentration of calcium and especially that of calcium
oxide, the latter having a much slower sputtering rate
than that of Si. It is also known that any enrichment
with alkaline-earth metals is to be proscribed in
respect of the optical quality of the layers,
especially after toughening.
To remedy this problem of removing water molecules
within the production line, it is known that water
vapor can be desorbed from the substrate (for example a
glass substrate) by heating the substrate in a vacuum.
This operation is lengthy (it takes several minutes
depending on the temperature of the substrate) and is
difficult to implement under vacuum (large glass sheet,
moving glass, heat transfer reduced to radiation).
Furthermore, "chemical" cleaning methods are known that
use oxygen radicals generated by O3 _or a radiofrequency
plasma containing oxygen. These methods are effective
for at least partly organic soiling matter (removed by
oxidation) and avoid the abovementioned disadvantages,
but they do not allow the removal of nonorganic soiling
matter and cannot treat substrates having the size of
architectural glass or substrates. In general, these
cleaning methods using oxygen radicals are confined to
sterilization cleaning steps and are generally employed

The aim of the present invention is therefore to
elevate the drawbacks of the abovementioned methods by
proposing a continuous method of cleaning a substrate,
especially a glass substrate, using a linear ion
source, which offers plasma conditions that facilitate
the selective removal of soiling matter, which
guarantee very limited, or even no, sputtering of the
surface of the substrate, which allow adsorbed water or
surfactants to be desorbed and which limit, very
significantly, the contamination of the substrate owing
to the erosion of the ion source cathode and/or by the
redeposition of sputtered materials on the equipment.
For this purpose, the method for the continuous vacuum
cleaning of a substrate, according to the invention, is
characterized in that:
- a species is chosen that has a low sputtering
efficiency and is chemically active with regard to the
soiling matter;
- using at least one linear ion source, a plasma
is generated from a gas mixture comprising
predominantly the species having a low sputtering
efficiency, especially one based on oxygen; and
- at least one surface portion of said substrate
optionally associated with a layer is subjected to said
plasma so that said ionized species at least partly
eliminates, by chemical reaction, the soiling matter
possibly adsorbed or located on said surface portion.
Thanks to these provisions, it is possible to clean a
surface portion of a substrate in a thin-film
deposition installation, this installation being of
industrial size and operating under vacuum.
In preferred embodiments of the invention, one or more
of the following provisions may optionally also be
applied:
- the cleaning method is followed, without
breaking vacuum, by at least one phase of depositing at

least one thin film on said surface portion of said
substrate, this deposition phase being carried out by a
vacuum deposition process;
- the deposition process consists of a cathode
sputtering process, especially magnetically enhanced
sputtering;
- the vacuum deposition process consists of a
process based on CVD (Chemical Vapor Deposition);
- a step of causing relative movement between the
ion source and the substrate is carried out;
- the linear ion source is positioned with respect
to the surface portion of the substrate in such a way
that the average sputtering efficiency of the ionized
species does not allow sputtering of said surface
portion;
- the linear ion source is positioned within a
plant of industrial size;
- the linear ion source generates a collimated
beam of ions with an energy between 0.5 and 2.5 keV,
preferably between 1 and 2 keV, especially about
1.5 keV;
- the cleaning method is carried out within at
least one chamber intended for depositing thin films by
vacuum sputtering, in a pumping chamber, or instead of
a cathode, or in an intermediate chamber located
between the latter items, or else within an airlock for
introducing the substrates; and
- two different surface portions of a substrate
are cleaned simultaneously or successively, using at
least said linear ion source.
According to another aspect of the invention, this also
relates to substrates, especially glass substrates, at
least one surface portion of which has been cleaned by
the method described above, this surface portion being
covered with a thin-film multilayer comprising layers
having different functionalities (solar control, low
emissivity, electromagnetic shielding, heating,
hydrophobic, hydrophilic and photocatalytic layers),

layers that modify the level of reflection in the visible (mirror and antireflection
layers) or that incorporate an active system (electrochemic, electroluminescent
or photovoltaic layers).
Other features and advantages of the invention will become apparent over the
course of the following description, given by way of nonlimiting example. Given
below is a single figure that illustrates the effectiveness for ablating traces of
suction cups:
BRIEF DESCRIPTION OF THE ACCOMPANYING DRAWING
- the single figure illustrates a test specimen showing the effectiveness of
an ion beam treatment on a trace of a suction cup.
In a preferred way of implementing the method which is the subject of the
invention, this consists in inserting , into a line of industrial size for depositing
thin films on a substrate, by cathode sputtering, especially magnetically
enhanced sputtering, and especially reactive sputtering in the presence of
oxygen and/or nitrogen, at lest one linear ion source.
The thin-film deposition may also be carried out by a process based on CVD
(Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor
Deposition), which is well known to those skilled in the art and an example of
its implementation is illustrated in document EP 0 149 408.
Within the context of the invention, the expression "industrial size" applies to a
production line whose size is suitable, on the one hand, for operating
continuously and, on the other hand, for handling substrates having one of its
characteristic dimensions, for example the width perpendicular to the direction
in which the substrate runs, of at least 1.5m.
The linear ion source may be mounted either instead of


In this case, according to the method which is the
subject of the invention, the linear ion source
operates in collimated mode with a gas mixture
containing predominantly oxygen, and a noble gas having
an atomxc mass of less than 25, such as for example
neon or helium, as minor component.
As nonlimiting example, oxygen is introduced with a
flow rate of 150 seem, with a voltage between the
electrodes of 3 kV and an electrical current of 1.8 A,
hence a consumed power of 5400 W (these figures relate
to a source 1 m in length).
The advantage provided by the gas mixture containing
oxygen consists of the fact that oxygen constitutes a
species having a low sputtering efficiency compared,
for example, with argon which on the contrary is a
species having a high sputtering efficiency.
Within the context of the invention, a species is said
to be of high sputtering efficiency when, owing to its
mass, its high effective impact cross section and its

a cathode, or at an airlock lin'king two deposition
chambers, or at the start of the line, or at the final
inlet airlock, or more generally in a chamber forming
part of a deposition line that is subjected to a high
vacuum (for example one having a value of the order of
1 x 10-5 mbar) .
It is possible to incorporate several sources within a
production line, the sources being able to operate on
just one side of a substrate or on each side of a
substrate (up-and-down sputtering line for example),
either simultaneously or consecutively.
Use is made of at least one linear ion source whose
operating principle is the following:
The linear ion source comprises, very schematically, an
anode, a cathode, a magnetic device and a source for
introducing gas. Examples of this type of source are
described for example in RU 2 030 807, US 6 002 208 or
WO 02/093987. The anode is raised to a positive
potential by a DC supply, the potential difference
between the anode and the cathode causing a gas
injected nearby to ionize.
The gas plasma is then subjected to a magnetic field
(generated by permanent or nonpermanent magnets),
thereby accelerating and focusing the ion beam.
The ions are therefore collimated and accelerated
toward the outside of the ion source, and their
intensity depends in particular on the geometry of the
source, on the gas flow rate, on their nature and on
the voltage applied to the anode.
Given below are various values of the mean free path
(in cm) for various pressures and types of gas.

energy as a result of being accelerated, this species
has sufficient energy to remove material from the
surface of the substrate under the effect of its
collision with the substrate.
This source is positioned, in the chamber and under the
abovementioned conditions, in such a way that the
collimated plasma of species having a low sputtering
efficiency reaches at least one surface portion of the
substrate running through the treatment chamber.
According to another advantageous feature of the
invention lying in the use of a gas mixture containing
predominantly oxygen and introduced into the source,
consisting in the formation, when the gas ionizes, of
0+ and then 0- species that are capable of very strongly
oxidizing the soiling matter.
The cleaning method according to the invention
therefore favors a chemical process rather than a
mechanical cleaning process (sputtering), this being
the case for the known methods of the prior art
employing linear ion sources, which use a plasma based
on species having a high sputtering efficiency (such as
argon).
It is therefore possible, on a surface portion of a
substrate, located on one side of the substrate or on
both sides of the same substrate (if several ion
sources are available):
- to oxidize the at least partially organic
soiling matter;
- to desorb volatile species (water, surfactants,
hydrocarbons); and
- to sputter residues having a low sublimation
energy and leaving the surface of the substrate intact.
The substrate thus treated is in the form of a glass
sheet, possibly curved, and possesses "industrial"
dimensions. Within the context of th'e invention,

"industrial" dimensions are understood to mean the
characteristic dimensions of a sheet of glass commonly
called in French PLF (i.e. full-width float) or DLF
(i.e. half-width float), i.e. greater than 3 m in width
and greater than 2 m in width, respectively.
Since the substrate, especially one made of glass, is
very little sputtered or not at all - there is no SiO2
sputtering there therefore cannot be any
contamination of the environment with this species.
There is no enrichment with alkaline-earth metals and
the surface composition of the substrate is not
modified. However, this cleaning method chemically
activates the surface portion of the substrate
(rendering it hydrophilic).
Likewise, the energy of the species having a low
sputtering efficiency is insufficient to erode the
cathode of the ion source and especially its frame-
forming parts made of iron, the oxidizing action of the
0' species on the iron molecules resulting in the
formation of ion oxides that are also known to be
difficult to sputter'. Consequently, there is very
limited contamination by the material of the cathode,
this having two advantages: it prevents flaws from
appearing in the coatings deposited on the contaminated
substrate and produces the frequency with which this
cathode has to be replaced.
One example of the treatment of organic soiling is the
removal by the ion source of part of the stearic acid
layer deposited on a glass specimen during the
standardized test applied to . self-cleaning
(photocatalytic effect) glazing units.
This layer is analyzed by infrared spectroscopy
(integration of the signals corresponding to the acid
function between 2800 and 2980 cm-1), before and after
exposure to the ion beam. A control specimen is

introduced at the same time into the chamber in order
to quantify the evaporation phenomenon during the
treatment.
The results obtained under the same power conditions
with two different gases introduced into the ion source
are presented: on the one hand, argon, a gas with a
high sputtering efficiency, and, on the other hand,
oxygen, a gas with a low sputtering efficiency.
The plasma characteristics of the source and the
geometry of the system are similar in both cases:
pressure about 2 mtorr; voltage across the terminals of
the source, 3 kV; current about 0.25 A.

It is therefore apparent that the treatment with oxygen
is more effective than the treatment with argon in
eliminating organic soiling as modeled by a fatty acid,
despite the lower sputtering efficiency of the former
gas .

Various other types of soiling can be removed using a
collimated beam of oxygen ions, in particular traces of
adhesive tape, traces of residual water due to poor
drying after the washing machine, traces from suction
cups, finger marks (the reader may refer to the single
figure) .
The latter type of trace is due to the handling of the
glass sheets of industrial size using prehensile
suction cups, which may leave elastomer residues or
other marks on the surface of the glass.
The substrates thus cleaned may continue, without
breaking vacuum, (that is to say the substrates remain
within the vacuum deposition installation) their path
through a chamber suitable for thin-film deposition by
known processes of various technologies: PECVD, CVD
(Chemical Vapor Deposition), magnetron sputtering or
else ion plating, ion beam sputtering and dual ion beam
sputtering.
Substrates, preferably transparent, flat or curved
substrates, made of glass or of plastic (PMMA, PC,
etc.) may be coated within a vacuum deposition
installation as mentioned above with at least one thin-
film multilayer conferring various functionalities on
said substrate.
These substrates thus coated form glazing units
intended for applications in the automobile industry,
especially a sunroof, a side window, a windshield, a
rear window, or single or double glazing for buildings,
especially interior or exterior glazing for buildings,
a store showcase or counter, which may be curved,
glazing for protecting objects of the painting type, an
antidazzle computer screen, or glass furniture.

Thus, according to a fxrst embodiment, the substrate
has a coating of the "enhanced thermal insulation" or
low-E (low-emissivity) type. This coating consists of
at least one sequence of at least five successive
layers, namely a first layer based on metal oxide or
semiconductor, chosen especially from tin oxide,
titanium oxide and zinc oxide (with a thickness of
between 10 and 30 nm), a layer of metal oxide or
semiconductor, especially based on zinc oxide , or
titanium oxide, deposited on the first layer (with a
thickness of between 5 and 15 nm) , a silver layer (with
a thickness of between 5 and 10 nm) , a metal layer
chosen especially from nickel chromium, titanium,
niobium and zirconium, said metal layer being
optionally nitrided (with a thickness of less than
5 nm) , and deposited on the silver layer, and at least
one upper layer (with a thickness of between 5_ and
40 nm) comprising a metal oxide or semiconductor chosen
especially from tin oxide, titanium oxide and zinc
oxide deposited on this metal layer, this upper layer
(optionally consisting of a plurality of layers) being
optionally of a protective layer called an overcoat.
Given below is an example of a substrate coated with a
low-E multilayer: substrate/SnO2/ZnO/Ag/NiCr/SnO2 •
Thus, in a second embodiment, the substrate has a
coating of the "enhanced thermal insulation" or low-E
or solar-control type, suitable for undergoing heat
treatments (of the toughening type), or coatings
designed for applications specific to the automobile
industry (also suitable for undergoing heat
treatments).
This coating consists of a thin-film multilayer
comprising an alternation of n functional layers A
having reflection properties in the infrared and/or in
solar radiation, based especially on silver (with a
thickness of between 5 and 15 nm), and of (n + 1)

coatings B where n > 1, said coatings B comprising a
layer or a superposition of layers made of a dielectric
based in particular on silicon nitride (with a
thickness of between 5 and 80 nm) , or on a mixture of
silicon and aluminum, or on silicon oxynitride, or on
zinc oxide (with a thickness" of between 5 and 20 nm) ,
so that each functional layer A is placed between two
coatings B, the multilayer also including layers C that
adsorb in the visible, especially based on titanium, on
nickel chromium or on zirconium, these layers being
optionally nitrided and located above and/or below the
functional layer.
Given below are examples of substrates coated with this
type of multilayer:

Thus, in a third embodiment, the substrate has a
coating of the solar control type.
The substrate is provided with a thin-film multilayer
comprising an alternation of one or more n functional
layers having reflection properties in the infrared
and/or in solar radiation, especially of an essentially
metallic nature, and of (n + 1) "coatings" with n > 1,
said multilayer being composed, on the one hand, of one
or more layers, including at least one made of a
dielectric, especially based on tin oxide (with a
thickness of between 20 and 80 nm) or on nickel
chromium oxide (with a thickness of between 5 and
30 nm), and, on the other hand, of at least one
functional layer (with a thickness of between 5 and
30 nm) made of silver or a metal alloy containing
silver, the (each) functional layer being placed
between two dielectric layers.
Given below are examples of substrates coated with this
type of multilayer:


Thus, in a fourth embodiment, the substrate has a
coating of the solar control type, suitable for
undergoing a heat treatment (for example of the
toughening type).
This is a thin-film multilayer comprising at least one
sequence of at least five successive layers, namely a
first layer, especially based on silicon nitride (with
a thickness of between 20 and 60 nm) , a metal layer,
based especially on nickel chromium or titanium (with a
thickness of less than 10 nm) deposited on the first
layer, a functional layer having reflection properties
in the infrared and/or in solar radiation, especially
based on silver (with a thickness of less than 10 nm),
a metal layer chosen especially from titanium, niobium,
zirconium and nickel chromium (with a thickness of less
than 10 nm) deposited on the silver layer, and an upper
layer based on silicon nitride (with a thickness of
between 2 and 60 nm) deposited on this metal layer.
Given below is an example of a substrate coated with
this type of multilayer:

Thus, in a fifth embodiment, the substrate has a
coating of the solar control type different from that
explained in the third embodiment.
As a variant, it is also possible to use the cleaning
method which is the subject of the invention to remove
residual water that would be liable to be adsorbed in
the layers. In this case, the linear ion source used
for cleaning the multilayer is not located at the front
of the line but between two cathode positions of the
magnetron line. In this case, it is a surface portion
of said substrate associated with at least one coating

one or more metal oxides chosen f'rom zinc oxide, tin
oxide, titanium oxide and zirconium oxide, these being
optionally doped in order to improve their optical,
mechanical and/or chemical properties, or based on one
or more nitrides chosen from silicon nitride and/or
aluminum nitride or based on tin/zinc/antimony mixed
oxides or based on silicon/titanium or titanium/zinc
mixed oxides or on mixed nitrides chosen from silicon
nitride and zirconium nitride, all these layers being
optionally doped in order to improve their optical,
mechanical and/or chemical properties, and the low-
index second layer and/or the low index fourth layer
being based on silicon oxide, silicon oxynitride and/or
oxycarbide or on a silicon aluminum mixed oxide, the
first and second layers having thicknesses of between 5
and 50 nm and the third and fourth layers having
thicknesses of between 10 and 150 nm.
Given below are examples of substrates coated with this
type of multilayer:
.
Thus, in a seventh embodiment, the substrate has a
coating with an electrochromic functionality.
This active multilayer is deposited between an upper
conductive layer based on 100 to 300 nm of ITO and a
lower conductive layer.
The active multilayer is for example made up as
follows:
- a layer of anodic electrochromic material made
of hydrated iridium oxide 40 to 100 nm in thickness (it
may be replaced with a hydrated nickel oxide layer 40
to 300 nm in thickness), which may or may not be
alloyed with other metals;
- a 100 nm layer of tungsten oxide;
- a 100 nm layer of hydrated tantalum oxide or

hydrated silica oxide or hydrated zirconium oxide; and
- a 370 nm layer of a cathodic electrochromic
material based on hydrated tungsten oxide.
According to yet other embodiments, the substrate
includes, on at least one of its sides, an
electrochemical device, especially an electrically
controllable system of the glazing type and having
variable optical and/or energy properties, of a
photovoltaic device or within an electroluminescent
device.
Next, some of these substrates are capable of
undergoing a heat treatment (bending, toughening or
annealing heat treatment) and are intended to be used
in the automobile industry, especially a sunroof, a
side window, a windshield, a rear window or a rearview
mirror, or single or double glazing for buildings,
especially interior or exterior glazing for buildings,
a store showcase or counter, which may be curved,
glazing for protecting objects of the painting type, an
antidazzle computer screen, or glass furniture, or, in
general, any glass, especially transparent, substrate.

WE CLAIM
1. A method for the continuous vacuum cleaning of a substrate comprising;
generating a plasma from a gas mixture comprising predominantly
oxygen using at least one linear ion source, wherein the linear ion source
generates a collimated beam of ions and subjecting at least one surface
portion of a substrate optionally associated with a layer to said plasma to
at least partly eliminate by chemical reaction, the soiling matter possibly
adsorbed or located on said surface portion without removing material
from the surface portion of the substrate.
2. The cleaning method as claimed in claim 1, wherein depositing at least
one thin film on said surface portion of said substrate without breaking
vacuum, this deposition phase being carried out by a vacuum deposition
process.
3. The method as claimed in claim 2, wherein the deposition process
consists of a cathode sputtering process, especially magnetically
enhanced sputtering.
4. The method as claimed in claim 2, wherein the vacuum deposition
process consists of a process based on CVD.

5. The method as claimed in claim 1, wherein a relative movement between
the ion source,and the substrate is carried out.
6. The method as claimed in one of claims 1 to 5, wherein the linear ion
source is positioned with respect to the surface portion of the substrate
in such a way that the average sputtering efficiency of the ionized species
does not allow sputtering of said surface portion.
7. The method as claimed in one of claims 1 to 6, wherein the linear ion
source generates a collimated beam of ions with an energy between 0.5
and 2.5 keV, preferably between 1 and 2 keV, especially about 1.5 keV.
8. The method as claimed in one of claims 1 to 3 and 5 to 7, wherein it is
carried out within at least one chamber intended for depositing thin films
by vacuum sputtering, in a pumping chamber, or instead of a cathode, or
in an intermediate chamber located between the latter items, or else
within an airlock for introducing the substrates.
9. The method as claimed in one of claims 1 to 8, wherein two different
surface portions of a substrate are cleaned simultaneously or
successively, using at least said linear ion source.


Method for the continuous vacuum cleaning of a substrate, comprising;
a species, which is oxygen is chosen that has a low sputtering
efficiency and is chemically active with regard to the soiling matter;
preparing a gas mixture comprising predominantly the oxygen species
having a low sputtering efficiency and containing substantially no
Argon;
using at least one linear ion source, wherein a plasma is generated
from said gas mixture and wherein the linear ion source generates a
collimated beam of ions;
at least one surface portion of said substrate optionally associated
with a layer is subjected to said plasma so that said ionized species at
least partly eliminates, by chemical reaction, the soiling matter
possibly adsorbed or located on said surface portion, without
removing material from the surface of the substrate.

Documents:

01870-kolnp-2006-abstract.pdf

01870-kolnp-2006-asignment.pdf

01870-kolnp-2006-claims.pdf

01870-kolnp-2006-correspondence other.pdf

01870-kolnp-2006-correspondence others-1.1.pdf

01870-kolnp-2006-correspondence-1.2.pdf

01870-kolnp-2006-description (complete).pdf

01870-kolnp-2006-description(complete)-1.1.pdf

01870-kolnp-2006-drawings.pdf

01870-kolnp-2006-form-1.pdf

01870-KOLNP-2006-FORM-13.pdf

01870-kolnp-2006-form-18.pdf

01870-kolnp-2006-form-2.pdf

01870-kolnp-2006-form-3.pdf

01870-kolnp-2006-form-5.pdf

01870-kolnp-2006-international publication.pdf

01870-kolnp-2006-international search report.pdf

01870-kolnp-2006-pct form.pdf

01870-kolnp-2006-priority document.pdf

1870-KOLNP-2006-ABSTRACT 1.1.pdf

1870-kolnp-2006-abstract-1.2.pdf

1870-KOLNP-2006-ABSTRACT.pdf

1870-KOLNP-2006-AMANDED CLAIMS 1.1.pdf

1870-kolnp-2006-amanded claims-1.2.pdf

1870-kolnp-2006-amanded claims.-1.3.pdf

1870-KOLNP-2006-AMANDED PAGES OF SPECIFICATION.pdf

1870-KOLNP-2006-AMENDED CLAIMS.pdf

1870-KOLNP-2006-CANCELLED PAGES.pdf

1870-kolnp-2006-correspondence 1.2.pdf

1870-kolnp-2006-correspondence.pdf

1870-KOLNP-2006-DESCRIPTION (COMPLETE) 1.1.pdf

1870-kolnp-2006-description (complete)-1.2.pdf

1870-KOLNP-2006-DESCRIPTION (COMPLETE).pdf

1870-kolnp-2006-drawings-1.1.pdf

1870-KOLNP-2006-DRAWINGS.pdf

1870-kolnp-2006-examination report 1.2.pdf

1870-KOLNP-2006-EXAMINATION REPORT REPLY RECIEVED 1.1.pdf

1870-KOLNP-2006-FORM 1 1.1.pdf

1870-kolnp-2006-form 1-1.2.pdf

1870-KOLNP-2006-FORM 1.pdf

1870-kolnp-2006-form 13 1.2.pdf

1870-kolnp-2006-form 18 1.2.pdf

1870-KOLNP-2006-FORM 2 1.1.pdf

1870-kolnp-2006-form 2-1.2.pdf

1870-KOLNP-2006-FORM 2.pdf

1870-KOLNP-2006-FORM 3 1.1.pdf

1870-kolnp-2006-form 3 1.2.pdf

1870-kolnp-2006-form 3-1.2.pdf

1870-KOLNP-2006-FORM 3.pdf

1870-kolnp-2006-form 5 1.2.pdf

1870-KOLNP-2006-FORM-27.pdf

1870-kolnp-2006-gpa 1.2.pdf

1870-kolnp-2006-granted-abstract.pdf

1870-kolnp-2006-granted-claims.pdf

1870-kolnp-2006-granted-description (complete).pdf

1870-kolnp-2006-granted-drawings.pdf

1870-kolnp-2006-granted-form 1.pdf

1870-kolnp-2006-granted-form 2.pdf

1870-kolnp-2006-granted-specification.pdf

1870-kolnp-2006-others 1.2.pdf

1870-KOLNP-2006-OTHERS DOCUMENTS.pdf

1870-KOLNP-2006-PETITION UNDER RULE 137.pdf

1870-kolnp-2006-reply to examination report 1.2.pdf

1870-KOLNP-2006-REPLY TO EXAMINATION REPORT.pdf

1870-kolnp-2006-translated copy of priority document 1.2.pdf


Patent Number 245781
Indian Patent Application Number 1870/KOLNP/2006
PG Journal Number 05/2011
Publication Date 04-Feb-2011
Grant Date 01-Feb-2011
Date of Filing 05-Jul-2006
Name of Patentee SAINT-GOBAIN GLASS FRANCE
Applicant Address LES MIROIRES, 18 AVENUE D'ALSACE F-92400 COURBEVOIE
Inventors:
# Inventor's Name Inventor's Address
1 NADAUD, NICOLAS 63, AVENUE PASTEUR F-94250 GENTILLY
2 ROUSSEAU, JEAN-PAUL 26 RUE DE 1'EST, 92100 BOULOGNE
3 LOERGEN, MARCUS AN SPEENBRUCH 15 52134 HERZOGENRATH
4 MATTMAN, ERIC 20 RUE OUDRY PARIS
PCT International Classification Number H01L 21/304
PCT International Application Number PCT/FR2005/050036
PCT International Filing date 2005-01-21
PCT Conventions:
# PCT Application Number Date of Convention Priority Country
1 0400787 2004-01-28 France