Title of Invention

"IMPROVED METHOD OF ETCHING SILICON"

Abstract The present invention provides a method of forming a silicon solar cell device formed in a silicon layer applied to a foreign substrate, by: a) forming a layer of organic resin as a mask over a free silicon surface to be etched; b) forming openings in the mask to expose the silicon surface in areas to be etched; and c) applying a dilute solution of hydrofluoric acid (HF) and potassium   permanganate (KMnO4) to the silicon surface exposed through the mask to thereby etch the silicon to a desired depth.
Full Text "Improved method of etching silicon
Fleld of the Invention
The prcscnt invention relates generally to the field of semiconductor device fabrication and In particular the invention provides an improved processing step for use in a method of forming metal contacte and other structures in thin film semiconductor devices. A new device structura for thin film photovoltaic devices is also provided.
Background of the InvmtJon
A major advantage of thin-film photovoltaic (PV) modules over convenţional wafer-based modules is the potenţial for low cost of production. However in practice cost savings have been difficult to achieve as a major component of cost is the number and complexity of process steps involved in the manufaoturing sequence and can quickly outweigh savings in material costs. In particular the number of steps that require precise alignment, or the spced of the equipment used to perform a step can have a strong bearing on cost, as can the robustness of a process, which tnight in some cases lead to additional remedial steps being required or result in lower performance of the end product because of material degradation. Therefore, process improvements which reduce alignment rcquirement, reduce the number of steps. reduce damage to the device or, allow a step to be performed more quickly provide signifîcant advantages.
Summarv of the Invention
The present invention provides a method of etching silicon through a mask comprising the steps of:
a) Forming a layer of organic resin as a mask over a free surface of the device
tobeetcbed;
b) Forming openings in the mask to expose the silicon surface in areas to be
etched;
o) Applying a dilute solution of hydrofluorio acid (HF) and potassium
permanganate (KMnO4) to the silicon surface exposed through the mask to thereby etch the silicon to a desired depth.
Preferably flie area of silicon to be etched has a width and length which are significantly greater (say by at least an order of magnitude) mân the depth to be etched. Io preferred embodiments the silicon to be etched is a thin film of silicon (such as polycrystalline silicon) on e foreign substrate and the etch is limitcd by the silicon being etched substantially down tu the substrate. However the process is equally applicable to single crystal material (ie wafer material) and can be made to progress at a

rate which allows depth of etch to be controJled by timing of the etch. The depth can be controlled to remove only a thin surface layer (eg to provide a clean surface for further proccssing) or can remove â significant thickness of thc silicon material)
Preferably the dilute solution of HF and KMnO comprises a solution of 1% HF and 0.1% KMnO4. Wîth this solution l .Suin of silicon will substantially etch away in 12 minutes at room teroperature (21°C).
The organic resin is preferably novolac, but other similar resins are also suitable such as commonly available photoresists. The openings in the resin layer can be fonned by chemical removal u$bg solutions of caustic substances such as pptassium hydroxide (KOH) or sodium hydroxide (NaOH). In a preferred method according to the invention, droplets of dilute (15%) potassium hydroxide are dispensed at locations intended for etching. The KOH solution is preferably deposited using ink-jet prinţ technology. Othcr mcthods of making openings in the tnask layer include laser ablation and photographic techniques (using photoresist).
Brief DescrlptJon of the Drawings
Embodiments of the invention will now be described by way of example with reference to the accompanying drawings (not drawn to scale) in which:
Fig. 1-is a diagram of a scctioc through a semiconductor dcvice after iniţial stcps of applying an anti-reflection coating over a glass subsţrate and depositing a doped semiconductor film over the anti-reflection coating;
Fig. 2 is the secţionai view seen in Fig. l after a scribing step has been completed to fonn a cell separating groove dividing separate cell areas and insulatfng layers havc been applied over Ihe semiconductor layer;
Fig. 3 is a schematic diagram of an X-Y table with an inkjet prinţ head fitted for direclly applying the insulation etchiiiit, using inkjet technology;
Fig. 4 is the secţionai view s«en in Fig. 2 (sbifted slightly to the left), after a pattem of etchant has been directly deposited onto Ihe insulatihg layer to open the insulating layer in areas where contacts to an underiying n type region of the semiconductor layer are rcquircd;
Fig. 5 is the secţionai view seen in Fig. 4 after the insulation layer has been opened în the areas where conlacts to the underiying n type region of the semiconductor layer are required;
Fig. 6 is the secţionai view «een in Fig. 5 after further etching steps have been pcrformcd to remove somc of the doped semiconductor film in the area where the contact to the underiying n type region of the semiconductor layer is required;

Fig. 7 is 1he secţionai view scxai in Fig. 6 after a reflow step to flow some of the insulating laycr into the holc formed by removal of some of the doped semiconductor film in the area where a contact to the underlying n"1" type region of the semiconductor layer are required. A pattern of caustic solution has been directly deposited onto fhe insulating layer to open the insulatiag layer in an area where a contact to an upper p"1" type region of the semiconductor layer is required;
Fig. 8 is the sectional view'seen in Fig. 7 after the caustic has opened the insulatipo layer. in the areas where the contact to the upper p type region of the semiconductor layer is required;
Fig. 9 is the sectional view seen in Fig. 8 after rurther etching steps have been performexJ to clean the surface of the doped semiconductor film of damaged material in the areas where the contact to the upper p4 type region of the semiconductor layer is rcquired;
Fig. 10 is the sectional view seen in Fig. 9 after a metal layer has been applied to contact the p4 and n4 type regions of the semiconductor material and to interconnect adjaccnt cells;
Fig. 11 is the sectional view seen in Fig. 10 after the metal layer has been interrupted to separate the contacts to the p & n4 type regions from each other within each ccll;
Fig. 12 is a back view (silicon side) of part of the device of Fig, 11; and
Fig. 13 is a diagram of a part of a completed device, illustrating the interconnecu'on between adjacent cells.
Detailed Descrtption of the Preferred Embodiments
Referring to the drawings, Fig. i illustrates a part of a semiconductor structure U which is a precursor to the photovoltaic device fabrication prooess described below. The semiconductor structure 11 is formed as a thin semiconductor film applied to a substrate 22 in the fonn of a glass saeet to which a thin silicon nitridc anti-reflecu'on coating 71 has been applied. The anti-reflection coating 71 has a thickness of 80nm. For optimal performance, the thin semiconductor film comprises a thin polycrystalline silicon film 12 formed with a total thickness in the range of l to 2um and preferably 1.6um. The polycrystalline silicon film 12 has an upper p4 type region 13 which is 60nm thick, a lower n4 type region 15 which is 40mn thick, and a 1.5um thick intrinsic or lightly p type doped region 14 separating the p4 and n4 type regions. The sheet resistance in both n4 type and p4 type layers is preferably between 400 and 2500 fl/o, with no more than 2xl014 cm2 boroo in total. Typical values are around 750 fi/a for
n type material and 1500 O/o for p type material. The thickness of the n type and p typc layers is typically bctwecn. 20 and 100 nm. The glass surface is preferably textured to promote light trapping, but this is not shown in the drawings for sake of clarity.
5 .
Pivision into cells
As seen in Fig. 2, the silicon film 12 is separated into cells by scribed isolation grooves 16. This is achieved by {.canning a laser over the substrate in areas where isolation grooves 16 are required to define the boundaries of each photovoltaic cell. To
10 scribe the grooves 16, the structme 11 is transferred to an X-Y stage (not shown) located under a laser operating at 1064 om to produce focusscd laser beam 73 which cuts the isolation grooves through the silicon. The laser beam is focussed to minimise the width of the groove, which islost active arca. Typically, a puise energy of 0.11 mJ is required to fully ablate the silicon film and gives a groove width of 50 um. To
15 ensure a continuous groove, succesive pulses are overiapped by 50%. The optimum cell width is in the range of S to 8 mm and cell widths of 6mm are typical.
. . As seen in Fig. 2, twq layers of insulation are preferably used on the surface of the silicon and are added after the laser scribing step described above. The firet insulation layer is an opţional thin but tough cap nitride 72. This layer protects the
20 exposed silicon along the edges of the cell definition grooves 16 after laser scribing and passivates the surface of the silicon, The cap nitride 72 is preferably capable of being etched completely in a few minutes to allow acoess to the silicon at n type and p type contact locations and typically compmes 6~0 nm of silicon nitride deposited by PECVD at a tempcrature of 300 - 320°C,
25 Before the cap layer 72 is applied, the structure 11 is transferred to a tank
containing a 5% solution of hydrofluoric acid for one minute. This removes any remainiiig debris and any surfece oxides that may have formed. The structure is rinsed in de-ionised water and dried.
The second insulation layer 17 is a thin layer of organic resin. The insulating
30 resin is resistant to dilutc soluţiona of hydrofluoric acid (HF) and potassium permanganate (KMnO4), and is preferably vacuum compatible to IO"6 mbar. The insulation material most often used iu novolac resin (AZ P150) similar to that used in photoresist (but without any photoactive compounds). The novolac resin iş preferably loaded with 20 - 30% white titania pigment (titanium dioxide) which unprovcs
35 coverage and gives it a white colour that improves its optical reflectivity to help trap light within the silicon. The resin layer 17 serves as an etch mask for etching steps
describcd bclow and also covers over the rough jagged surface that is fotmed along the edges of the cell definition grooves 16, an area that is prone to pinholes in the cap nitride layer 72. The organic resin layer 17 also thermally and optically isolates the metal layer from the silicon to facilitate laser patterning of a metal layer in contact fotming procese «teps de$cribedbelow.
The novolac resin is applied to each module to a thickness of 4 to 5 um using a spmy coater. After the structure 11 is coated, it is passed under beat lamps to heat it to 90°C to cure. As seen in Fig. 2, the insulation layer 17 is applied over the cap layer 72 and extends into flie cell scparation grooves 16.
Opcning mask and etchine n tvoe contact openings
In order to makc electrica! contact to ihe buried n+ type layer and the upper p typc layer with a metal layer which will be subsequently formed, holes must be made through the novolac resin layer 17 and the cap nitride layer 72 in the locations where the n type "crater" contacte and the p rype "ditnple" contacte are reqvrired. Firstly with regard to the "crater" contacte to the buried n type silicon layer, as well opening the covolac resin layer 17 and the cap nitride layer 72, most of the silicon film 12 must be removed from areas beoeath what will later become the n type metal pads to forni the n rype contact openings 32. Refemng to Figs. 3,4 and 5 ink-jet technology is u$ed to open holes in the novolac resin layer 17 at the crater locations. To achieve this the structure 11 is loaded onto an X-Y stage equipped with an ink-jet head 91 having multiple nozzles with a nozzle spacing of 0.5 mm and controlled by controller 92. The glass is held down with a vacuum chuck and initially scanned to ensure that no point is deformed more than l mm ahove the stage. The glass is then scanned beneath the head 91 at a table speed of typically 4QQ mm/s. Droplets 76 of dilute (15%) potassium hydroxide (KOH) (sec figure 4) are dispensed at locations intended for n type 'crater' contacte. The odd-numbered nozzles fire in the odd-mimbered cells, and the cvpn-nvunbercd nozzles fire In the evcn-numbercd cells, so that within a given cell, the spacing between lines of droplets is l mm. The spacing between droplets within each line is 400 um, hence the rate of droplet release at a table speed of 400 mm/s is l kHt. The droplets are sized to eteh circul v openings in the resin layer that are about 100 fim in diameter. The KOH sohrtion r-îinoves the resiri insulation 17 in the area of rne droplet 76 aftcr a fcw minutes to form the hole 32 ecen in Fig. 5.
Tbe openings 32 are spaced holes so that lateral continuity is maintained in ihe semiconductor layer ader contact fonnation. The Ink-jet printing prooess applies a droplet 76 of the caustic solution in a controlled manner to remove the insulation only

whcrc the n typc contacts arc to be tbrmed. The caustic solurion prefcrably contains potassium hydioxlde (KOH) but can aiso usc sodium hydroxide (NaOH) and includea glycerol for viscosity control. The prinţ head used for this purpose is a model 128ID, 64ED2 or 64-30 manufactured by Iiil: Jet Technologies Inc., and will prinţ substances having & vis cosity in the range S te 20 centipoîse. The droplet size deposited by the prinţ head is in fhe range of 20 to 240 picolitre corresponding to a deposited droplet diamctcr range of 50- 3 SOfim. la Jhs prefemed embodiment the droplets are printed fit a diameter of lOOum. It should be noted that novolac is an organic resin closely related to the resins used in photo-resist material and the etchant printing process described above will apply equally to the patteming of other subh materials.
To extend the opening 32 into the silicon layer 12 as seen in Fig. 6, the structure 11 is rinsed in water to remove resvdual KOH from the ink-jet printing proccss, and it is thcn immersed in a tank containing a 5% sqluu'ou of hydrofluoric acid for l minute io remove the silicon nitride frora th? n type contact openings 32. The eheet is then directly transferred to a tank contairnng 1% hydrofluoric acid (HF) and 0.1% potassium permangânate (KMnOi) for 4 rninutea. This tune is long enough to remove all of the p4 typc layer and etch down along grain boundaries to expose some of the n+ type layer for the silicon thicknesses stated above, however the tune should be adjusted for differeot silicon layer thicknesses, silicon crystal quality and extent of surface texturing. The structure U is then rinsed in de-ioniscd water and dried.
The resulting opening 32 in the silicon 12 has a rough bottom surface 32, in which some points may be etched through to the anti-reflection layer 71 and some ridges 83 extend into the lightly doped p type region 14 as seen In Fig. 6". However as long as some of the ri4" type region is exposed, good contact can be made to the TI type region. Because the p type region is very lightly doped in the area near Ae.n type region there is insufficient lateral conductmty to căuşe shorttng if some p type material isalso left in the bottom of the hole 32,
Reflow of mask
Because the side walU of th« holc 32 are passing through the p4 type region 13 and the lightly doped region 14, the walls need to be insulated to preveni shorting of the p-n junotion. This is achieved by causing the insulation layer 17 to re-flow whereby a portion of the insulation layer 78 in the Vicinity of the edge of the opening 32 flows into die hole to form a covering 79 over the walls as seen in Fig. 7. To achieve this the sheet is passed through a zone containing a vapour of a suitâble solvent. This causes the novolac reein. of the insulating kyer 17 to reflow, ehrinking the size of the eratei

openings 32. As the samples exit this zone, Ihey arc hcated undcr beat lamps to a temperature of 90°C to drive out the remainîng solvent.
The rate of «-flow will vary with the aggressiveness of the solvent used, the
concentration and, temperature. Taer» are many suitable, volatile solvents that will
dissolve organic resins such as novohic, including substanoes suoh as acetone. Acetone
is a suitable solvent for the proces, but acte quite aggressively, fequhing only a few
seconds to cover the walls of the hole 32 with resin, and making it difBcult to control
the process accurately. The preferred solvent is propylene glycol raonoraethyl ether
acetate (PGMEA) and the device is introduced into an atmosphere containing a
saturated vapour of PGMEA at room temperature (eg, 21° C) for 4 minutes until a sligbt
shrinkageoftheholesintheinsulationisobscrvcd. •
ppeninginask and deaningp tvoe contact otxaunes
A further set of holes 19 (şes Fig, 8) are then formed in the insulation layer 17, again using the printing and etching procesa described âbove with reference to figs. 3,4 and 5. These openings are fotmed by printing droplets 81 of caustic soludon onto the insulation (see Fig. 7) in the locations where p type contact "dimples" are required. Following the removal of the insulation layer 17 by the caustic solua'on to form the openings 19 (see Fig. 8), any residual caustic solution is washed off with water and the cap layer 72 removed in the openings 19 with an etch of 5% hydrofluoric add (HF) for l minute (note limes of firom 10 seconds to 10 minutes may be required to rcmovc the nitride layer dcpending on its stoichiometry). Optionally, any damaged silicon material on the surface of the p type region 13 is then removed to allow good contact using an etch in 1% hydrofluoric acid (HF) aad 0.1% potassium permanganate (KMnO4) for ten seconds followed by a tinse in de-ionised water to provido the slightly recessed contact "dîmple" 85 seen in Fig. 9. This length of etch is long enough to remove surface plasma damage without etching «11 the way through the p type layer 13. It is also short enough to have negligible impact on the n type contacta.
Formation of metal contacta
The fi»al stage of device fabrication involves depositing a metal layer and slicing it up eo that U forms a plurality of independent electrical conncctions, cach one collecting currcnt from one line of p type ditnple contacts and delivering it to a line of n type crater contacts in the adjacent cell. In this tnanner, monoHtbic series interconnection of the ceîls is achieved.

Before the metal layer is applied, the structure 11 is immersed into a tank containing a 0.2% solution of hydrofLuoiic acid for 20 seconds. This acid temoves the surface oxide from boţb the crater and dfanple contact?. There is wide latitude for the strength and duration of this etch. The structure is then rinsed in de-ionised water and dried.
Tuming to Fig. 10, the contact metal for the n type and p type oontaots is applied simultaneousJy by depositing a thin metal layer 28 over tbe insulation layer 17 and extending into the holes 32 and 19 to contact the surfaces 82 and 85 of the n type region 15 and p type region 13. The metal layer is preferably a thin layer of pure aluminium, whlch makes good electrica! contact to both n4 type and p+ type silicon, provides good lateral oonductivity., and has high optical reflectance. The aluminium thidcness i$ typically 100 nm.
Isolation of n an p type contacts
The isolation of the n type and p type contacţs is achieved by using a laser 86 (see Fig. 10) to melt and/or evaporate the metal layer 28 to thereby form an isolation groove 31 a$ seen in Fig. 11. When the laser is pulsed on, a small amount of metal is ablated directly under the beam creating a hole 31.
The structure 11 is processed using a laser operating at 1064 nm to scribe the isolation grooves in the metal layer 28. Tbe laser is adjusted so that it scribes througli the metal layer 28 without damaging the silicon 12. These scribes 31 separate the n type contacts 32 fiom the p type contacts 19 within each cell, while retaining the series connection of each cell to its neightours. ftieferred laser conditions are a puise energy of 0.12 mJ with the beam defocused. to a diameter of about 100 um. The puise overlap is 50% and the scribes are spaced 0.5 mm apart. In addition, there are discontinuous scribes 34 along each cell defimtion gfopve 16 (see Fig. 12).
Fig. 12 illuatratca a rear view of a part of a device madeby the procees desoribcd above, from which it can be secn mat each of the cells of the device 11 comprises an elongate photovoltaic element 35a, 35b, 35c4 35d divided across its long axis by a plurality of transverse metal isolation soribes 31 whiclv Isolate alternate sets of holes 19 and holes 32 respectively providing contacts to the p+ type and n+ type regions of the cell. The transverse scribes 31 are made as long substantially straight scribes extending over the length of the device such that each scribe crosscs each elongate cell.
Following the fonnation of the first set of scribes 31, a further set of metal isolation scribes 34 are formed over the cell separadon scribes 16 between adjacent cells 11, to isolate every second pair of cells. The metal isolation scribes 34 extending

to either side of any one of the .elongete trans verse scribes 31 are offset by one cell with respect to those on the other side of the same transverse scrîbe 31 such that thc cclls become series connected by a matrix of connection links 36 with alterna ting offsets, connecting one set of p type contacte 19 of one cell 35 to a set of n type contacte 32 of an adjacent cell 35, as shown in Figure 12,
The metal isolation scribes 31 comprises a firet set of long scribes transverse to the cells 35 from 50-200nm wide, preferably about 100f«n wide. The scrfbes are typically spaced on centres of 0.2-2.0ram and preferably about O.Smm to form conducting strips about 0.2-1.9mm and preferably about 0.4mm wide. The isolation scribes 34 comprises a second set of tnterrupted scribes parallel to the long direction of the cells 35 and substantially coincident with the cell isolation grooves 16 in the silicon, The isolation scribes 34 are also from 50-200M.ro wide, preferably about lOOum widc. It îs equally possible to form the isolation scribes 34 before forming the transverse isolation scribes 31. The scribed arcaş are illustrated in Fig. 12 with cross-hatching.
A portion of the completed structure is illustrated in Fig. 13 which shows the connection of an n type contact of one cell to the p type contact of an adjacent cell to provide a series connections of cells. In practice therc may be severa! n type contacts grouped together and severa! p type contacts grouped together however for the sake of clarity only one of each is shown in each cell. The arrangement shown in Fig. 13 is also schematic as the isolation grooves 16 in the silicon and the isolation grooves 31 in the metal run perpendicularly to one another in practice as is seen in Fig. 12.
It will be appreciated by persons sfcillcd in the art that numerous variations and/or modifications may be madc to the inventiou as shown in the specific embodiments without departing tVc.m the spirit or scope of the invention as broadly described. The present embodiments are, therefore, to be considered ui all respecta as illustrative and not restrictive.







We claim:
1. A method of forming a silicon solar cell device formed in a silicon layer applied to a foreign
substrate, the method comprising the steps of:
a) forming a layer of organic resin as a mask over a free silicon surface to be etched;
b) forming openings in the mask to expose the silicon surface in areas to be etched; and
c) applying a dilute solution of hydrofluoric acid and potassium permanganate to the silicon surface exposed through the mask to thereby etch the silicon to a desired depth.

2. The method as claimed in claim 1 wherein the area of silicon to be etched has a width and length which are significantly greater than the depth to be etched.
3. The method as claimed in claim 2 wherein the area of silicon to be etched has a width and length which are at least an order of magnitude greater than the depth to be etched.
4. The method as claimed in claim 1, 2 or 3 wherein the silicon to be etched is crystalline silicon.
5. The method as claimed in claim 1, 2, 3 or 4 wherein the etch is performed to remove a thin surface layer of the silicon.
6 The method as claimed in claim 1, 2, 3 or 4 wherein the etch is performed to expose at least part of a doped layer forming an underlying side of a p-n junction.
7. The method as claimed in claim 1, 2 3 or 4 wherein the silicon to be etched is a thin film of silicon on the foreign substrate and the etch is performed until at least a portion of the substrate is exposed in each area to be etched.
8. The method as claimed in claim 7 wherein the etch substantially completely removes the silicon from the substrate in each area to be etched.
9. The method as claimed in claim 4, 5, 7 or 8 wherein the silicon to be etched is a thin film of polycrystalline silicon on the foreign substrate.
10. The method as claimed in any one of 1 to 9 wherein the dilute solution of HF and KMn04 comprises a solution of 1% HF and 0.1% KMnO4
11. The method as claimed in anv one as claimed in claims 1 to 10 wherein the organic resin material is novolac.

12. The method as claimed in any one as claimed in claims 1 to 11 wherein the openings in the
mask are formed by depositing a reactive material onto the surface of the mask in a
predetermined pattern, the method comprising:
a) placing the structure on a stage;
b) locating an ink-jet print device over the structure and in close proximity thereto, the ink-jet device and stage being moveable relative to one another;
c) supplying the ink-jet device with the reactive material; moving the structure and the ink-jet device relative to one another under control of control means; and
d) controlling the ink-jet device to deposit predetermined amounts of the reactive material onto a surface of the mask in the predetermined pattern as the structure and the ink-jet device move relative to one another.

13. The method as claimed in claim 12 wherein glycerol is added to the reactive material to adjust the viscosity of the reactive material to that required by the ink-jet device.
14. The method as claimed in claim 12 or 13 wherein the ink-jet device is an ink-jet print head is an InkJet Technology Inc. model 128ID, 64ID2 or 64-30.
15. The method as claimed in claim 14 wherein the viscosity of the reactive material is adjusted to be in the range of 5 to 20 centipoise.
16. The method as claimed in claim 12, 13, 14 or 15 wherein the stage is an X-Y stage and the ink-jet device is fixed, such that relative motion of the photovoltaic device and the print head is achieved by moving the stage under the ink-jet device.
17. The method as claimed in any one of 1 to 16 wherein the openings in the mask are formed using a solution of potassium hydroxide (KOH) or sodium hydroxide (NaOH).
18. The method as claimed in any one of 1 to 17 wherein droplets of dilute (15%) potassium hydroxide are dispensed at locations intended for opening the mask.
19. The method as claimed in claim 1 substantially as hereinbefore described.

Documents:

1060-DELNP-2006-Abstract-(27-07-2009).pdf

1060-delnp-2006-abstract.pdf

1060-DELNP-2006-Claims-(27-07-2009).pdf

1060-delnp-2006-claims.pdf

1060-DELNP-2006-Correspondence-Others (11-02-2010).pdf

1060-delnp-2006-correspondence-others 1.pdf

1060-DELNP-2006-Correspondence-Others-(08-07-2010).pdf

1060-DELNP-2006-Correspondence-Others-(10-12-2009).pdf

1060-DELNP-2006-Correspondence-Others-(23-04-2010).pdf

1060-DELNP-2006-Correspondence-Others-(24-11-2009).pdf

1060-DELNP-2006-Correspondence-Others-(25-11-2009).pdf

1060-DELNP-2006-Correspondence-Others-(27-07-2009).pdf

1060-delnp-2006-correspondence-others.pdf

1060-delnp-2006-description (complete).pdf

1060-DELNP-2006-Drawings-(27-07-2009).pdf

1060-delnp-2006-drawings.pdf

1060-DELNP-2006-Form-1-(08-07-2010).pdf

1060-delnp-2006-form-1.pdf

1060-delnp-2006-form-18.pdf

1060-DELNP-2006-Form-2-(08-07-2010).pdf

1060-delnp-2006-form-2.pdf

1060-DELNP-2006-Form-3-(27-07-2009).pdf

1060-delnp-2006-form-3.pdf

1060-delnp-2006-form-5.pdf

1060-delnp-2006-pct-101.pdf

1060-delnp-2006-pct-210.pdf

1060-delnp-2006-pct-237.pdf

1060-delnp-2006-pct-401.pdf

1060-delnp-2006-pct-409.pdf

1060-DELNP-2006-Petition-138-(27-07-2009).pdf


Patent Number 242780
Indian Patent Application Number 1060/DELNP/2006
PG Journal Number 38/2010
Publication Date 17-Sep-2010
Grant Date 10-Sep-2010
Date of Filing 28-Feb-2006
Name of Patentee CSG SOLAR AG of Sonnenallee 1-5, 06766 Bitterfeld-Wolfen, Germany
Applicant Address SONNENALLEE 1-5, 06766 BITTERFELD-WOLFEN, GERMANY
Inventors:
# Inventor's Name Inventor's Address
1 YOUNG, TREVOR, LINDSAY C/- CSG SOLAR PTY LTD, 82-86 BAY STREET, BOTANY, NSW 2019, AUSTRALIA
PCT International Classification Number H01L 21/308
PCT International Application Number PCT/AU2004/001216
PCT International Filing date 2004-09-09
PCT Conventions:
# PCT Application Number Date of Convention Priority Country
1 2003904934 2003-09-09 Australia