Title of Invention

PROCESS FOR DOPING OF ORGANIC SEMICONDUCTORS WITH QUINON DI - IMINE DERIVATIVES

Abstract A process for Doping organic semiconductor matrix material with an organic mesomeric compound as organic dopant which is a quinone or quinone derivatives for changing its electrical properties ease handling the production & increasing long term stability, comprising: i) selecting the matrix material to be doped and the dopant in the ratio of 1:1 to 1:10,000 ii) evaporating the dopants from a process or compound applying heat/radiation in either of the following ways for desired doping; a) mix evaporation in vacuum with a source for matrix material and a source for the dopant. b) sequential dumping of the matrix material and dopant followed by diffusion of the dopant through thermal treatment. c) doping of the matrix material layer through a solution of dopant followed by evaporation of the solvent through thermal treatment. d) Surface doping of the matrix material layer of dopant applied on the surface.
Full Text FORM 2
THE PATENT ACT 1970 (39 of 1970)
The Patents Rules, 2003 COMPLETE SPECIFICATION (See Section 10, and rule 13)
TITLE OF INVENTION
PROCESS FOR DOPING OF ORGANIC SEMICONDUCTORS WITH QUINON DI-
IMINE DERIVATIVES

2. APPLICANT(S)
a) Name
b) Nationality
c) Address

NOVALED AG GERMAN Company TATZBERG 49, 013 07 DRESDEN, GERMANY

3. PREAMBLE TO THE DESCRIPTION
The following specification particularly describes the
invention and the manner in which it is to be
performed : GRANTED

ORIGINAL
382/MUM/2004

11-8-2007 22 AUG2007

The invention relates to the use of an organic mesomeric compound as organic dopant for doping of an organic, semiconductor matrix material for changing its electrical properties, a doped semiconductor matrix material and an electronic component manufactured from such a material.
Since a couple of decades the doping of silicon semiconductors is standard of technology. According to this technology, by generating electrical charge carriers in the material, an increase in the initial quite low conductivity and - depending on the type of dopant used - a change in the Fermi level of the semiconductor is achieved.
Since a couple of years it has become known that one can heavily influence organic semiconductors by doping with respect to their electrical conductivity. Such organic semiconductor matrix materials can be built-up either from compounds having good electron donator properties or from compounds having good electron receiver properties. For doping of electron donator materials strong electron accepters such as Tetra-cyano-quinon-di-methan (TCNQ) OR 2, 3, 5, 6-Tetrafluoro-tetracyano-1, 4-benzo-quinon-dimethan (F4TCNQ) have become known. M.Pfeiffer, A. Beyer, T. Fritz, K. Leo, Appl. Phys. Lett., 73 (22), 3202-3204 (1998), und J. Blochwitz, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett.. 73 (6), 729-731 (1998). These generate through electron transfer processes in electron donator type base material (hole transport materials) so-called holes, through their number and mobility the conductivity of the base material changes more or less significantly. As matrix materials with hole transport properties, N, N' perarylized benzidine TPD or N, N' ,N" perarylized start burst compounds like the substance TDATA, or certain metal phthalocyanrnes, especially like zinc phthalocyanine ZnPc are known.
However, the compounds investigated so far have - for a technical application -disadvantages in the production of doped semiconductor organic layers or suitable electronic components with that kind of doped layers, since the production processes in the mass production plants or in the technical standard cannot be controlled to sufficiently precise degree, which leads to high control and regulating effort within the processes, in order to achieve a desired product quality, or to
2

undesirable tolerances of the products. Further there are disadvantages in using presently known organic dopants with respect to electronic component structures like LEDs, field effect transistors (FET) or solar cell themselves, because the said production difficulties while handling the dopants can lead to undesired non-uniformity in the electronic components or undesired aging effects of the electronic components. However, simultaneously it should be considered that the dopants to be used show suitable affinity towards electrons and other properties suitable for the application case, because, for example, the dopants - under given conditions -also co-determine the conductivity or other electrical properties of the organic semiconductor layer.
Therefore, the task of the invention is to provide organic dopants for doping of organic semiconductors, which can be easily handled in the production and which lead to electronic components, whose organic semiconductor materials are reproducible.
In the invention this task is resolved by using an organic mesomeric compound as organic dopant, which is a quinone or quinone derivative, especially an un-substituted, substituted or anelled quinone or quinone derivative or a 1, 3, 2-dioxaborin or 1,3, 2-dioxaborin derivative, especially an un-substituted, substituted or anelled 1, 3, 2-dioxaborin or 1, 3, 2-dioxaborin derivative and which has under the same evaporation conditions a lower volatility than tetrafluro-tetracyano-quinone-dimethane (F4TCNQ). As quinone derivative in the sense of the invention especially those quinonoide systems are to be understood, in which one. two or more quinonoide oxygen atom(s) is/are replaced by a mesomeric and / or inductive electron drawing, double bonded substitutes, especially by such a substitute given further below. Those rests are to be understood as inductive electron drawing, which show vis-a-vis carbon an 1-effect especially against unsaturated hydrocarbon. Through the higher evaporation temperature or lower volatility under the same conditions the production processes can be better controlled and thus can be conducted with lesser effort and in reproducible manner, wherein through the provision of quinones or their derivatives or 1, 3, 2-dioxaborines or their derivatives as dopants ensure in the respective component - at


lower diffusion coefficient - component structures uniform overtime, and facilitate a sufficient electrical conductivity of organic semiconductor matrix at favorable electron affinity of dopants. Further, through the dopants charge carrier injection of contacts in the doped layer can be improved. Further, the doped organic semiconductor material or the resultant electronic component can show an improved long term stability based on the compounds used in the invention. This refers, for example, to a reduction in the dopant concentration over time. Further, this refers to the stability of doped layer, which is arranged in the neighborhood of un-doped layers of an electro-optical component, so that this results in to electro-optic components with increased long term stability of electro-optical properties such as luminosity factor in case of a given wavelength, efficiency of a solar cell etc.
Preferred further developments result from the following sub-claims.
The volatility can be determined here as the evaporation rate or as vaporization of a substrate measured as layer thickness growth per time unit (nm/s) under otherwise same conditions (for example, a pressure of 2 x 10-4 Pa and given evaporation temperature, for example 150°C). Preferably, the volatility of compounds according to the invention is the Through the vaporization rate of the substrate with the compounds according to the invention - for example - by using a quartz thickness monitor, it can be determined how it can be usually deployed in the production of OLEDs. Especially, the ratio of vaporization rates of matrix materials and dopants can be measured through independent readings of the same by using two separate quartz thickness monitors, in order to adjust the doping ratio.
The volatility relative to that of F4TCNQ can be based on the pure compound or on the volatility from a given matrix material, for example ZnPc. It is understood that the compounds used in accordance to the invention are preferably finished in such a way that these evaporate more or less or practically un-decomposed. However, under the circumstances targeted precursors can be deployed as dopant source, which releases the compounds used according to the


invention, for example acid additive salts, for example, of a volatile or non-volatile inorganic or organic acid, or charge transfer complexes of the same, wherein the acids or electron dopants are preferably non-volatile or only marginally volatile or wherein the charge transfer complex itself acts as dopant.
Preferably the dopant is selected in such a manner that it generates - under the otherwise same conditions like especially doping concentration - (mol. Ratio dopant : matrix, layer thickness, current strength) precisely same as or preferably higher conductivity than F4TCNQ with the given matrix material (for example Zinc phtalo cyanine or any other matrix material mentioned further below), for example, a conductivity (S/cm) greater than / equal to 1.1-times, 1.2-times or greater than / equal to 1.5-times or two times that of F4TCNQ as dopant.
Preferably the dopant used according to the invention is selected in such a way that the semi-conductor, organic matrix material doped with this - after a change of temperature from 100°C to room temperature (20°C) - still shows > 20%, preferably > 30%, especially preferred > 50% or 60% of conductivity (S/cm) of the value at 100°C.
For the said preferred hole transport materials HT, according to the invention, different quinine derivatives and further 1, 3, 2-dioxaborines can be used as dopants.
Quinolde Structures
In Quinoide compounds used according to the invention one, two, three or four or all Quinoide =0-groups of Quinoide compound can be selected from the group, which can represent an ortho or para Quinoide system, wherein for multiple core Quinoide systems also mixed ortho-para Quinoide systems can occur, as these have been defined below for the substitutes SI to Sll, S13to S21, if necessary also without SI. the substitutes are defined below.
For a Quinoide compound used according to the invention one, two, three or four or all Quinoide =0-groups of Quinoide compound can be selected from the group, consisting ofSl to Sll, S14-S16, if necessary also without SI, or can be selected from the group consisting of SI, S5 - S14 and S16, if necessary also without SI, or can be

selected from the group consisting of S3, S4, S6 -S10, S15. S16, if necessary also without SI.
Also for a Quinoide compound used according to the invention one, two, three or four or more or all substitutes for a Quinoide =0-group be selected or from the group, consisting of SI, S5, S7 -S9, Sll, S14, S16 - S21 if necessary also without SI, or from the group SI. S5, S8, S9, Sll, S14, S16, S18, if necessary also without SI.
Especially, one, two. three, four or more or all substitutes can be for one Quinoide group =0 =C(CN), or =N (CN) or =N (N02) or =C (CN) (C (0) R) or =N (C (0) R). Preferably, one, two, three or four or more or all Quinoide substitutes of the Quinoide system receive a mesomeric bound -N02 and / or -C (0) R group.
Compounds with following Quinoide basic structures can be deployed according to the invention.



Wherein in the compounds 3, 3b, 3c m can be; 0, 1, 2, 3, 4 to 6 or greater, and wherein further in the compounds 25 - 27 the substitute Z can be equal to a group M or it can differ from another substitute X, Y, V, W.
Wherein in compound 25 both the groups can be M or for M equal to C=Z both the groups can be equal to Z or can be different, and wherein in compound 32 preferably one or both the groups M are not =C=Z.
It is understood that each of the given compounds can cover all stereo isomers, especially synisomers and anti-isomers, as far as each of these are steric possible.
The substitutes T, U, V, W, X, Y and Z here preferably represent mesomeric and / or based on carbon or a hydrocarbon, especially a saturated hydrocarbon, inductive drawing double bonded substitutes.
Especially, for the compounds 1-33 each of the substitutes T, U, V, W, X, Y and / or Z can be different or same and can be selected from the group consisting of:


Wherein R is preferably an organic residue or hydrogen. R17 can be especially also -CF3 or Perfluoralkyl, especially with CI - C6. if the substitute is S17, then X and Y of substitute S17 are preferably not again S17 and/orS18to S21.
Each of the substitutes T, U, V, W, X and / or Z in the compounds 1-33 can be same or different and can be selected from the group consisting of

Wherein R is preferably an organic residue or hydrogen, wherein R17 of group S8 can be especially also -CF3 or in general perfluoralkyle, especially with CI to C6. Especially, one, two, three, four or all the substitutes can be selected from this




The substitutes T, U, V, W, X, Y and / or Z each in the compounds 1 to 33 can be same or different and can be selected from the group consisting ofSl, S5, S7-S9, Sll, S14, S16-21, if necessary, also without SI, or from the group SI, S5, S8, S9, Sll, S14, S16, S18, if necessary also without SI. Especially, one, two, three, four or all the substitutes can be selected from this group. Especially, X and Y can be same or different and X or Y or X and Y can be selected from this group. Especially, alternative or additional V and W can be same or different and V or W or V and W can be selected from this group.

For the compounds 1 to 33 the following relationships between the substitutes can be valid. The following relationships among substitutes can be especially applicable for the group of substitutes SI to S21. The following relationships among substitutes can be especially applicable for the group of substitutes SI to Sll, S14 to S16. The following relationships among substitutes can be especially applicable for the group of substitutes SI, S5 to S14, S16. The following relationships among substitutes can be especially applicable for the group of substitutes S3, S4, S6 - S10, S15.S16.
X and / or Y cannot be or cannot be simultaneously =0 or =C (CN)2. This is applicable especially, for a single core Quinoide dopant, whose substitutes preferably form or represent one or no aromatic ring system. Especially, this can be applicable for the compounds 1 and 20. Alternatively or additionally V and / or W cannot be or cannot be simultaneously ==0 or =C (CN) 2.
Preferably in the compound used in accordance with the invention each of - X and = X is same equal / or ==U and = T are equal and / or = V and = W.
Preferably, the substitutes AA and BB are equal, these can also be different.
At least one or two of the substitutes from the can be = X, =Y, = U, = V, =T, = W, =Z or all substitutes from the said group can be different from = 0,
= X and = Y can be different from = 0.
Preferably, at least one or two of the substitutes are from the group = X, = Y, = U, = V, = T, = W, = Z or all the substitutes from the group differ from = S.
Preferably, at least one or both the substitutes from the group =X and =Y is/are different from =S
At least one or two of the substitutes from the group = X, = Y, = U, = V, = T, = W, = Z or all substitutes from the group can be different from = C (CN)2.
At least one or both the substitutes from the group = X and = Y can be different from = C(CN)2.
Preferably, at least one or both the substitutes from the group = X and = Y are equal to = N (CN).

Preferably, alternatively or additionally one or both the substitutes = V and = W are equal to = N (CN) and / or one or both the substitutes = U and = T equal to N (CN).
Preferably, at least one or both the substitutes from the group = X and = Y and / or one or both the substitutes from the group = V and = W are equal to = N (N02).
Preferably, at least one or both the substitutes from the group = X and = Y and / or
one or both the substitutes from the group = V and = W are equal to = NR, wherein
R can also be -CF3 or general perfluoralkyle, especially with CI - C6.
Preferably, at least one or both the substitutes from the group = X and = Y and / or
one or both the substitutes from the group = V and= W can be equal to = N (C (0)
R10.
Preferably, at least one or both the substitutes from the group = X and = Y and / or one or both the substitutes from the group = V and= W can be equal to = C (NCh)2.
Preferably, at least one or both the substitutes from the group = X and = Y and / or one or both the substitutes from the group = V and= W can be equal to = C (C (0) R13) (C (0) R14).
Preferably, at least one or both the substitutes from the group = X and = Y and / or one or both the substitutes from the group = V and= W can be equal to = C (CF3)2 or generally = C (perfluoraklyle)2, especially with Cl-6.
Preferably, at least one or two or more or all substitutes from the group = X, = Y, = U, = V, = T, = W, = Z are equal to = N (CN).
Preferably, at least one or two or more or all substitutes from the group = X, = Y, = U, = V, = T, = W, = Z are equal to = C (NO2) 2 or contain an NO2 group conjugated with the Quinoide system.
Preferably, at least one or two or more or all substitutes from the group = X, = Y, = U, = V, = T, = W, = Z are equal to = N (N02).
Preferably, at least one or two or more or all substitutes from the group = X, = Y, = U, = V, = T, = W, = Z are equal to = NR, wherein R especially can also be -CF3, or perfluoralkyle with especially Cl-6.


Preferably, at least one or two or more or all substitutes from the group = X, = Y, = U, = V, = T, = W, = Z are equal to = N (C (0) R18).
Preferably, at least one or two or more or all substitutes from the group = X, = Y, = U, = V, = T, = W. = Z are equal to = C (C (0) R13) (C (0) R14) or contain one C (0) R group conjugated with the Quinoide system.
Preferably, at least one or two or more or all substitutes from the group = X, = Y, = U, = V, = T, = W, == Z is equal to = C (CF3)2 or generally == C (perfluoralky.'e) 2, especially with Cl-6.
Especially, for each of the compounds 1-31 it can be X = y or all substitutes X, Y, U, V, T, W, Z can be equal, without being restricted to this. Accordingly, for a Quinoide compound generally all Quinoide substitutes can be equal. If necessary, X or Y or X and Y are not equal 0, especially for the compounds or 1 or 20 or for compounds with only one Quinoide ring. If necessary, X or Y or X and Y are not equal S, especially for the compounds or 1 or 20 or for compounds with only one Quinoide ring. If necessary, X or Y or X and Y are not equal C (CN) 2, especially for the compounds or 1 or 20.
This is applicable especially for a compound with only one 6 link Quinoide ring, especially for a ring with 6 C atoms.
If the compound has at least one or two or more Quinoide =0 groups and / or =S groups, especially if this is applicable in one of the compounds 1 to 33 for T, U, V, W, X, Y or Z, especially in case if X or Y or X and Y is equal to 0 or S, then the Quinoide ring is anelled or substituted, especially if there is only one Quinoide ring, preferably with at least one or at least two aryl residues, of which one, several or alt of them have hetero atoms.
The substitutes AA and / or BB are double bonding, mesomeric and / or inductive electron attracting substitutes, preferably selected from the group shown below.


Wherein, if necessary, also other suitable 2-bonded especially also double bonded substitutes can be deployed. R 28 can be especially also -CF3, or any other perfluoroalkyi group, preferably with C1-6.
The compound as per invention can represent a Quinoide system with a Quinoide ring and 1, 2 or 3 or more anelled and / or aromatic rings each forming a rest R. Each of the aromatic rings can have one or more hetero atoms and can be substituted or non-substituted. The Quinoide system can be an ortho Quinoide or para Quinoide system. The Quinoide system can be especially selected from the group of compounds 1 - 33, without being restricted to this. One, two, three or more or all of the aromatic rings can also be selected from the group -0-, -S-, -NR- by a group - Ml- C(R) = C(R) - M2 or -Ml - C(=Z) - M2 - with Ml, M2.
The invention covers further compounds with a Quinoide system made of two rings consisting of 5 or 6 ring atoms each, which can be anelled with 1, 2, 3,4, 5 or 6 or more aromatic rings and / or can be substituted under formation of a rest R. The aromatic rings can be substituted or un- substituted.
The rings have preferably 6 atoms each, which can be 6 carbon atoms. In one or more rings or per compound all together there can be 1, 2, 3 or 4 or more C atoms can replaced through hetero atoms like 0, S. N. Different Quinoide systems can be anelled, can be mesomeric compounded through one or more double or triple bonds, which can C-C bond or hetero atom-C bonds or can be linked in a different way. The compound can be especially selected from the group of compounds 1 - 33,

without restricting itself to this. One, two, three or more or all the aromatic rings can be selected by a group -Ml-C- (R) -C (R) -M2- 0- of -Ml-C (=z) -M2- with Ml, M2 equal and / or un-equal and from the group -0-, -S-, -NR-.
Further the invention relates to compounds with 3 or 4 quinoide rings consisting of mutually independent 5 or 6 atoms, which can have 1,2,3,4,5,6,7,8,9 or 10 aneUed or a rest R forming aromatic rings with 6 atoms. The aromatic rings can be substituted or un-substituted. From the carbon atoms of a ring, several rings or from the compound in all 1,2,3 or 4 atoms can be hetero atoms like 0, N, or P. The compound can be especially selected from the group of compounds 1- 33, without restricting itself to this. One, two, three or more or all the aromatic rings can be selected by a group -Ml-C- (R) =C (R) -M2- 0- of -Ml-C (=z) -M2- with Ml, M2 equal and / or un-equa! and from the group -0-, -S-, -NR-.
Independent of this the compounds 1,2,3,4,5,6,7,8,9 or 10 used according to the invention can have aryl residue, of which at least one, several or especially preferred all are anelled with one or more Quinoide systems and / or among themselves and / or form the residual R. The aromatic rings can be substituted or un-substituted. Aryl residues may be considered here also as hetero aryl residues. The aryl residues can link two each Quinoide rings with each other, preferably under mesomeric link of Quinoide rings. The Quinoide system can be especially selected from the group of compounds 1-33, without being restricted to this. One, two, three or more or all the aromatic rings can be selected by a group -Ml-C- (R) =C (R) -M2- or -Ml-C (=z) -M2- with Ml, M2 equal and / or un-equal and from the group -0-, -S-, -NR-. Thus, for example, in each of the compounds 4, 22 or 23 2 or 3 or more (hetero) aryl rings can be arranged bridging between the Quinoide rings.
The aromatic rings of the said Quinoide systems and / or the groups -Ml-C (R) =C (R) -M2- or - Ml-C (=z) -M2- are preferably per halo genized, especially perfluorized or percyano substituted. Preferably no more non-aromatic and / or non-quinoide rings are contained.
Independent of this the compounds used according to the invention can have 2, 3, 4,5 or 6 or more Quinoide ring systems. Preferably, one, several or all the Quinoide rings have 5 or 6 links. Ring carbon atoms can be replaced with hetero atoms. At

least two, several or all of Quinoide rings can be anelled with each other under mesomeric link to a larger Quinoide system or can be linked mesomeric through one or several bridges or can be linked under not forming a larger mesomeric system. The compound can be especially selected from the group of compounds 1-33, without restricting itself to this. The Quinoide system can be especially selected from the group of compounds 1-33, without being restricted itself to this. One, two, three or more or all the aromatic rings can be selected by a group-Ml-C- (R) =C (R) -M2- or-Ml-C (=z) -M2-with Ml, M2 equal and / or un-equal and from the group ~0-, -S-, -NR-,
The substitutes A, B, K, D, E, F, G; H of compounds 14 and 15 can be different or even equal and can assume following structures, Imin-nitrogen =N-, phosphine =P-0- of the substituted methylene carbon =C-R19.
It is understood that in all compounds as per invention one, several or all N atoms can be replaced by P atoms.
Especially following compounds with following substitution patterns can be used according to the invention:
The each of the compounds [VARIOUS COMPOUNDS AS PER LIST IN THE ORIGINAL PAGE
19] 1, 2, 3(m=0), 3(m=l), 3(m=3), 3(m=4), 3b(m=l), 3b(m=2), 3b(m=3), 3b(m=4), 3c(m=l), 3c(m=2), 3c(m=3), 3c(m=4), 6, 7,10,11,11a, 14,15,16,17,18,19, 20, 21 (fur M ungleich =C=Z), 26 (fur M ungleich =C=Z), 27 (fur M gleich -O-, -S-, -NR- oder =C=Z mit Z = SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, S13, S14, S15, S16, S17, S18, S19, S20 oder S21), 28 (fur U = SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, S13, S14, S15, S16, S17, S18, S19, S20 oder S21), 30 (mit M gleich -O-, -S-, -NR- oder =C=T mit T = SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, S13, S14, S15, S16, S17, S18, S19, S20 oder S21), 32,33
Show following concrete substitution pattern, wherein following each of the compounds the substitute X is allocated to the first row and substitute Y below to the following row.
With X and Y as follows:

[VARIOUS SUBSTITUTES GIVEN ON ORIGINAL PAGES 19, 20, 21, 22,23]
X: Sl,Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl,Sl,,
Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14,
X: Sl,Sl, Sl, Sl, Sl, Sl, Sl
Y:S15,S16,S17,S18,S19,S20,S21
With X and Y as follows:
X: S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, X: S2, S2, S2, S2, S2, S2, S2 Y: S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, X: S3, S3, S3, S3, S3, S3, S3 Y: S15, S16, S17, S18, S19, S20, S21 With X and Y as follows:
X:S4,S4,S4,S4,S4,S4,S4,S4,S4,S4,S4,S4,S4,S4,S4,S4
Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14,
Y-GAGAGAGAGAGAGA
Y: S15, S16, S17, S18, S19, S20, S21 With X and Y as follows:
X: S5, S5, S5,85, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, X: S5, S5, S5, S5, S5, S5, S5 Y: S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14,

X: S6, S6, S6, S6, S6, S6, S6 Y: S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, Y:Sl, S2, S3, S4, S5, S6, S7, S8, S9, SlO, Sll, S12, S13, S14, X: S7, S7, S7, S7, S7, S7, S7 Y: S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SlO, Sll, S12, S13, S14, X: S8, S8, S8, S8, S8, S8, S8 Y: S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, X: S9, S9, S9, S9, S9, S9, S9 Y: S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: SlO, SlO, SlO, SlO, SlO, SlO, SlO, SlO, SlO, SlO, SlO, SlO,
Y: Sl, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, X: SIO, SIO, SIO, SIO, SIO, SIO,
SlO, SlO, SlO
Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, X: Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:

X: S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9,S10, Sll, S12, X: S12, S12, S12, S12, S12, S12, S12, S12 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X:S13,S13,S13,S13,S13,S13,S13,S13,S13,S13, S13, S13, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S13, S13, S13, S13, S13, S13, S13, S13 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S14, S14, S14, S14, S14, S14, S14, S14 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X:S15,S15,S15,S15,S15,S15,S15,S15,S15,S15, S15, S15, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S15, S15, S15, S15, S15, S15, S15, S15 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S16, S16, S16, S16, S16, S16, S16, S16 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S17, S17, S17, S17, S17, S17, S17, S17 Y: S13, S14, S15, S1&, S17, S18, S19, S20, S21
With X and Y as follows:
X: S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S18, S18, S18, S18, S18, S18, S18, S18 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:

X: S19, S19, S19, S19, S19, S19, S19, S19, S19, S19, S19, S19, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S19, S19, S19, S19, S19, S19, S19, S19, S19 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S20, S20, S20, S20, S20, S20, S20, S20, S20, S20, S20, S20, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S20, S20, S20, S20, S20, S20, S20, S20, S21 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and Y as follows:
X: S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, Y: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S21, S21, S21, S21, S21, S21, S21, S21, S21 Y: S13, S14, S15, S16, S17, S18, S19, S20, S21.
The compounds 4, 5, 5b, 5c, 8, 9,12, 21 (equal to V and W), 22, 23, 24, 24a, 24b, 25 and 26 (for M unequal =C=Z), 27 (for M unequal =C=Z), 29, 31 show especially, following concrete substitution pattern, wherein following each of the compounds the substitution X is allocated to the first row and the substitution V below it, as indicated at the beginning of the row, is allocated to the subsequent row.
With X=Y and V=W
[VARIOUS SUBSTITUTES GIVEN ON ORIGINAL PAGES 24,25, 26, 27 AND 28]
With X and V as follows:
X: Sl,Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl, Sl,Sl,
V: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, S13, S14,
X: Sl, Sl, Sl, Sl, Sl, Sl, Sl
V: S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, S2, V: Sl, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, S13, S14, X: S2, S2, S2, S2, S2, S2, S2 V: S15, S16, S17, S18, S19, S20, S21
With X and V as follows:

X: S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, S3, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, X: S3, S3, S3, S3, S3, S3, S3 V: S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
Y-S4S4S4S4S4S4S4S4S4S4 S4 S4 S4 S4
V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, Y-S4.S4S4S4S4.S4.S4
V: S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S5, S5, S5, S5, S5, S5, S5, S5, S5, S5, S5,S5, S5,S5,
V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14,
X: S5, S5, S5, S5, S5, S5, S5
V: S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, S6, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, X: S6, S6, S6, S6, S6, S6, S6 V: S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, S7, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, X: S7, S7, S7, S7, S7, S7, S7 V: S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8, S8,
V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14,
X: S8, S8, S8, S8, S8, S8, S8
V: S15, S16, S17, S18, S19, S20, S21

With X and V as follows:
X: S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, S9, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, S13, S14, X:S9, S9, S9, S9, S9, S9, S9 V: S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S1O, S1O, S1O, S1O, S1O, S1O, S1O,S1O, S1O, S1O, S1O, S1O,
V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, X: SIO, SIO, SIO, SIO, SIO, SIO,
S1O, S1O,S1O
V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll, V: Sl, S2, S3, S4, S5, S6, S7, S8, S9,SlO, Sll, Sl2, X: Sll, Sll, Sll, Sll, Sll, Sll, Sll, Sll V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, S12, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, X: S12, S12, S12, S12, S12, S12, S12, S12 V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S13, S13, S13, S13, S13, S13, S13, S13, S13, S13, S13, S13, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, X: S13, S13, S13, S13, S13, S13, S13, S13 V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, S14, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, SIO, Sll, S12, X: S14, S14, S14, S14, S14, S14, S14, S14 V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:

X: S15, S15, S15, S15, S15, S15, S15, S15, S15, S15, S15, S15, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S15, S15, S15, S15, S15, S15, S15, S15 V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, S16, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S16, S16, S16, S16, S16, S16, S16, S16 V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, S17, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S17, S17, S17, S17, S17, S17, S17, S17 V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X: S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, S18, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S18, S18, S18, S18, S18, S18, S18, S18 V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X:S19,S19,S19,S19,S19,S19,S19,S19,S19,S19, S19, S19, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S19, S19, S19, S19, S19, S19, S19, S19, S19 V: S13, S14, S15, S16, S17, S18, S19, S20, S21
With X and V as follows:
X:S20,S20,S20,S20,S20,S20,S20,S20,S20,S20, S20, S20, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S20, S20, S20, S20, S20, S20, S20, S20, S21 V: S13, S14, S15, S16, S17, S18, S19, S20, S21 With X and V as follows:
X: S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, S21, V: SI, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, X: S21, S21, S21, S21, S21, S21, S21, S21, S21 V: S13, S14, S15, S16, S17, S18, S19, S20, S21.

The invention further covers the said compounds 4, 5, 5b, 5c, 8, 9,12, 21 (wherein 2 residues M are equal to V and W), 22, 23, 24, 24a, 24b, 25 and 26 (for M unequal =C=Z), 27 (for M unequal =C=Z), 29, 31 if for substitutes it applies that X = v and Y = W with concrete substitute patterns, if in the above said tables for these compounds V is replaced by Y and if following each of the individual compounds the substitute X is allocated to the first row and the substitute Y below this is allocated to the next row.
The invention further covers the said compounds 4, 5, 5b, 5c, 8, 9,12, 21 (wherein 2 residues M are equal to V and W), 22, 23, 24, 24a, 24b, 25 and 26 (for M unequal =C=Z), 27 (for M unequal =C=Z), 29,31 if for substitutes it applies that X = W and Y = V with concrete substitute patterns, if in the above said tables for these compounds V is replaced by Y and if following each of the individual compounds the substitute X is allocated to the first row and the substitute Y below this is allocated to the next row.
In the compounds 21, 25 and 26 both the residues can equal or independent of each other: -s-, -0-, -NR- or =C =Z with Z=S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, Sll, S12, S13, SI 4, S15, S16, S17, S18, S19, S20 or S21.
The residues R1 to R32 can be equal or different or selected from the group consisting of hydrogen, halogen, (especially -F, -CI), cyano, nitro, nitroso, sulfamide (un-substituted or substituted, especially C1-C6 mono or di-alkyie substituted), carboxy, C1-C7 Cabalkoxy, C1-C7 sulfo, sulfo halogen (especially -F or -CI), halogen carbonyle (especially -F or -CI), carbamoyl (unsubstituted or substituted, especially C1-C6 N mono-substituted or equal or independent of each other N-C1-C6 di-substituted), Formyle, amidinformyle, C1-C6 Alkyle sulfanyl, C-C6 Alkyle sulfonyle, C1-C25 hydrocarbon, preferably C1-C14 hydrocarbon or CI to CIO or CI to 6 hydrocarbon, wherein one or several or all hydrocarbon atoms of the group can be substituted by one or several of the above said residues, wherein hydrocarbon can be saturated, un-saturated or aromatic hydrocarbon. Each of the hydrocarbon groups can be especially per-halogenized, per- chlorinated or per-ftuorized (especially trifmormethyle). The hydrocarbon group can be linear or

branched or cyclic, for example, cyclohexyie or cyclopentyle. One or several hydrocarbon atoms can be replaced by each of hetero atoms, especially N, 0, S, - (0) S (0) - or P (R). The (hetero) hydrocarbon residues can be linked among themselves or with a Quinoide or other ring, for example with a (hetero) aryle ring in cycle.
Especially, the residues R1 to R32 can be one of the groups of acetyl-, trifluoracetyl-, benzoyl-, pentafluorbenzoyl-, naphthoyl- or alkoxycarbonyl-, wherein the alkyi residue can be an Alkyle with one or six or up to ten C atoms, especially up to four, non-branched or branched bonded with each other, as well as trialkylephosphoryl with alkyi residues, which can also consist of a chain with up to five or six or eight carbon atoms non-branched or branched or cyclically linked with each other, or triarylephosphoryle with aryle residues with preferably 6 to 14 C atoms, especially up to 10 C atoms. Further, the residues Rl - R12, which can be equal or different among themselves, can be either aryle or hetero aryle, like e.g. phenyl, naphthyl, anthranyl, pyridyl, chinoxalyl, pyrazolyl, oxazolyl, 1,3,2 - dioxaborinyl, or 1,3,4 -oxdiazolyl, which can be substituted either through hydrogen or a lower alkyi which can be bonded with up to eight saturated carbon atoms, which can be non-branched or branched or cyclically connected, preferably however, through halogen, here mainly fluor or cnlor, trhchlormethyl, perfluoralkyi with one or up to six carbon atoms, here especially trifluormethyle, however also through cyano, nitro, nitroso, sulfo, carboxy, carbalkoxy, halogen carbonyl, carbamoyl, formyi, amidinformyle, alkylsulfanyl and alkylsulfonyt, wherein the alkyi residues here can consist of a chain with up to five or six or up to eight non-branched or branched or cyclically interlinked carbon atoms, as well as through trialkylephosphoryl with alkyi residues, which also can consist of a chain up to five or six or up to eight non-branched or branched or interlinked carbon atoms. Especially, the aryl or hetero aryl residues can be perhalogenized, especially perfluorized.
The residues R2, R3, R4, R5, R6 in the compounds 3,3b, 3c or formulas IV, V or VI can be equal or different for different n or m.
The residue R1 to R32 (which are bonded with a Quinoide or aromatic system of a compound used according to the invention and which are arranged next to each

other and which are separated through two, three or four atoms of Quinoide or aromatic structure) can be bonded with each other with the build-up of a carbocyclic. especially aromatic rings, or heterocyclic, especially hetero carbocyclic ring. This is applicable especially for the compounds 1 to 33, however, also for other quinones or quinone derivatives used according to the invention. Each of this applies, for example, pair-wise alternative or simultaneously for the residues Rl, R2 and / or R3, R4 of the compounds 1, 3. 3b, 7, 8, 9, 10, 11, 12, 23, 24, 25, 27, 28, the residues Rl, R2; R2, R3; R4, R5 and / or R5, R6 of the compound 2, the residues Rl, R2; R3, R4; R5, R6; R7, R8 of the
compound 3, the residue R5, R6; R7, R8 of compounds 28, 29 or others. The bridging atom group can form a single group, which is selected from -L1C(R1) =

Wherein, the residue R13 of different groups can be different. The given bridging atom groups can be especially planned for, if X and / or Y is equal =0 or =S or =C (CN)2, Especially then L can be equal -0- or -S- or -NR-.
Each two neighboring residues of R1 - R32 can be bonded with each other through a carboxy- - (CO) - or a carbimide group - (CNR) -, wherein for this R the analogue substitution sample is valid like for R1 - R30, It is, however, also possible that two neighboring residues R are linked with each other in such a way through carbon atoms or hetero atoms, that a new carbocyclic or heterocyclic structure element is

condensed on the respective cyclic base structure. For example, in the compound type 1 the residues R1 and R2 as well as R3 and R4an mean condensed benzo residue or naputuo residue, but these can also stand for a condensed thiophen-, furan-, 1,3,4- oxidazol-, pyridine-, pyrazin-, triazin-, tetrazin-, pyran-, thiopyran-, dithiin-, phosporin-, phthalic acid anhydride, phthalic acid imide or dithiazol residue, wherein these residues intern can be substituted exclusively or partially through other electron attracting groupings like halogen, under this preferably, fluor or chlor, trifluormethyle or cyan, nitro, nitroso, sulfo, carboxy, carbalkoxy, halogen-carbonyle, carbamoyl, forrnyl, amidinformyle. The same applies analogically for the residues R1 and R2 or R2 and R3 or for the residues R4 and R5 or R5 and R6 in the compound type 2 as well as for the residues R1 and R2, R3 and R4, R5 and R6 and R7 and R8 in the compound type 3. as well as for the residues R2 and R3 or R5 and R6 in the compound type 4 or 5, as well as for the corresponding pairs of the residue R of another compounds, which come sufficiently near each other to build a 5 or 6 link ring.
The bridged trans-diketo form of compound 8 can e.g. lead to the structures 28 or 29. In the formula 26 the carbon acid anhydride oxygen can also be replaced through a substituted nitrogen group =N-R1 and can thus build up a carbon acid imide structure.
The aromatic residues with which the Quinoide systems can be substituted and / or anelled, can be perhalogenized, especially perfluorized, perchlorated or perfluorochlorated. If necessary, some of the halogen atoms, for example, up to half or more can be substituted through hydrogen.
Correspondingly also alternative or simultaneously the same can be applicable for the residue R of the Quinoide systems. In place of halogen atoms in the aromatic residues and / or in the Quinoide systems also CN groups can be planned.
Two Quinoide systems each i.e. Chi and Ch2 can linked with each other by forming a compound Chl-ZB-Ch2 through a residue ZB, wherein the Quinoide residues Chi and Ch2 can be mesomerically linked with each other or can be mesomerically different from each other. The Quinoide residues Chi and Ch2 can

be equal or different and can be selected from the group of compounds 1 to 4 and 5 to 33, wherein, if necessary, also more Quinoide systems can be linked with each other, for example, by forming structures fike Chl-ZB1-Ch2-ZB2-Ch3, wherein Chi, Ch2, CD3 can be equal or different and each time can represent the compounds 1 to 4 and 5 to 33, without being restricted to this. ZB1 and ZB2 can be equal or different.
The bridge -Z- can have 1, 2 to 4, to 6 or up to 10 or even more bridge atoms, which can be carbon atoms or at least partially hetero atoms.
If two Quinoide compounds, like in formula 5,5b or 5c are linked through a residue Z with each other, then this bridge -Z- can consist of alkenylene, halogenalkenylene, acetylene, alkylen, halogenalkylene, especially perfluoralkylene with one to eight saturated carbon atoms, which can be bonded with each other either as un-branched out or branched out or can consist of arylene, hetarylene, which can be bonded with hydrogen or with low alkyi residues with one to six or up to eight saturated carbon atoms, which can be linked un-branched out or branched out or cyclically linked with each other, preferably, however, with halogen, here mainly fluor or chlor, trichlormehtyle. perfluoralkyle with up to six carbon atoms, here especially trifluormethyle, but also cyano, nitro, nitroso, sulfo, carboxy, carbalkoxy, halogencarbonyle, carbamoyle, formyle, amidinformyle, alkylsufanyle and alkylsufonyle, wherein the alkyle residue here consists of a chain with up to eight un-branched or branched or cycHcally linked carbon atoms, as well as trialkylephosphoryl substituted with alkyle residues (which can consist of a chain with up to eight carbon atoms un-branched or branched linked with each other). The alkenylene group and the alkylene group can have one or several C-C-multiple bonds. The bridge atoms of the group Z can consist of only non-saturated carbon atoms or hetero atoms, wherein the said groups can be un- substituted or substituted. The bridge atoms of group Z can consist of only saturated or aromatic carbon atoms or hetero atoms, wherein the said groups un-substituted or substituted, so that both the Quinoide systems can be mesomeric bonded with each other.

and/or can be selected from the group consisting of
and / or can be selected from the group consisting of
The bridge -Z- can cover one or several groups, especially from the following groups in the form - (Z) n-, for example, with n equal to 1, 2, 3 or 4 or more, each of which can be equal or different from each other. Z can be selected from the group consisting of



wherein the given bridges also cover substituted bridges like for example -NR-, -(C=X) -, -CR1=CR2-.
And/or can be selected from the group consisting of car boxy- - (CO) -, carbimide- -(CNR) -. thiophenylene-, furanyle-, 1,3,4-oxdiazolylene-, triazin-, tetrazinylene-, pyranylene-, thiiopyranylene-, dithiinylene-, phosphorinylene-, phthal acid anhydride, phthal acid imide and dithiazol residue.
Each of the aromatic rings or given carbo bridges or hetero bridges can be substituted or un-substituted. X can be a single or double substituted carbon atom, a single substituted nitrogen atom or =0 or =S, preferably selected from one of the above mentioned groups o- of the sub- groups.
The residues Rl or R2 can be different from the residues Rl or R2 of compound base structures 1 to 33.
Besides there is a possibility, that both the Quinoide structures are directly linked with each other in some or the other manner.

Representation of Quinoide structures
All the syntheses of Quinoide compounds described below are incorporated herewith in full scope through reference in this invention and are captured here.
Often the corresponding substitution samples are generated in the oxidizing educt. 1,4-quinones can be best represented through oxidation of respective hydro-quinones (W.T. Sumerford, D.N. Dalton, J. Am. Chem. Soc. 1944, 66,1330; J. Miller, C. Vasquez, 1991 patent US506836; K.Koch, J. Vitz, J. Prakt. Chem. 2000, 342/8 825-7) or through fluorized and / or chlorinated aromatic compounds. (A. Roedig at al. Chem. B. 1974,107, 558-65; O.I.Osrna, V.D.Steingarz, Zh. Org. Chirn. 1974,10, 329; V.D.Steingarz at al Zh. Org. Chim. 1970, 6/4, 833).
1, 3-lndandion compounds were synthesized by V. Khodorkovsky (V, Khodorkovsky at al Tetrahedron Lett. 1999,40,4851-4).
N,N' -Dicyan-l,4-quinonediimines are accessible either through reaction of N,N'-BistrimethylsHylcarbodiinude on 1,4-quinone compounds (A. Aumuller, S, Hunig, Liebigs Ann. Chem., 1986, 142-64,) or through oxidation of corresponding N,N'-Dicyan-l,4-diamine compounds (G.D.Adreetti, S. Bradamante, P. C. Pizarri, GA Pagani, Mol. Cryst. Lig. Cryst. 1985,120. 309-14). wherein N,N'-Dicyan-l,4-diamine compounds can be obtained by cyanization of phenylene-l,4-diamine with cyan halogenides or through de-sulfuration of respective thio-urea derivatives.
Simple tetra cyano quinone di-methanes can be represented through the 1,4-cyclohexandion by condensation in benzene with ammonium acetate buffer at the water repellant and subsequent oxidation by bromine (D.S.Acker, W.R.Hertler, J. Am. Chem. Soc. 1962, 84, 3370). Further, also Hertler and colleagues could show that these compounds can be synthesized through 1,4-Xylene and their analogue through side chain bromination, substitution through cyanide, condensation with carbonic acid diethyl ester, adding carbonic acid methyl ester groupings in cyanide groups and subsequent oxidation (J. Org. Chem. 1963,28,2719).
Acceptor substituted tetra cyano quinone di-methanes can be represented from the sodium salt of t-butyl-malon acid dinitril's and acceptor substituted 1,4-dihalogen aromatic compounds (R.C. Wheland, E.L.Martin, J. Org. Chem., 1975,40, 3101).

It was possible to represent tetra cyano quinone di-methanes from 1,4-dihalogen aromatic compounds PD-catalyzed with malodinitrill-anion and subsequent oxidation (S. Takahashi at. al., Tetrahedron letters, 1985. 26,1553).
Quinoide 1,4-potyphenylene E. A. Shalom, J.Y. Becker, I, Agranat, Nouveau Journal de Chimie 1979,3,643-5.
Hetero anelled quinones were represented through multiple step synthesizing path. (B. Skibo at al, J. Med. 1991, 34, 2954-61; H. Bock, P. Dickmann, H.F. Herrmann, Z. Naturforsch. 1991, 46b, 326-8, J. Druey, P. Schmidt, Helv. Chim. Acta 1950, 140, 1080-7) Bridged quinoide compounds are represented by M. Matsuoka) H. Oka, T. Kitao, Chemistry Letters, 1990, 2061-/]/J\Dieckmann, W. R. Hertler, R. E. Benson, J. A. C. S. 1963, 28, 2719-24; K. Takahashi, S. Tarutani, J. C. S. Chem. Conun. 1994r 20 519-20; N.N. Woroschzov. W. A. Barchasch, DokiadyAkad. SSSR 1966, 166/3, 598.
Anelled TCNQ compounds are represented by M. Matsuoka, H. Oka, T. Kitao, Chemistry Letters, 1990, 2061-4; B. S. 25 Ong, B, Koeshkerian,, J. Org. Chem. 1984, 495002- 3.
Pyrazino-TCNQ compounds can be represented through 5,8 Diiodo chinoxa-line Palladium catalyzed with the sodium salt of the Maiodi-nitril,( T . Miyashi at al, J. Org. Chem. 1992, 57,30 6749-55)
Pyrazino-TCNQ compounds and other hetero anelled derivatives can be manufactured in different ways (Y. Yamashi-ta at al Chemistry Letters, 1986, 715-8, F. WudI at al, J. Org. 35 Chem. 1977,421666-7).
Anelled DCNQI compounds can be synthesized through the corresponding quinones as per Hunig (J . Tsunetsugu at al, Chemistry Letters, 2002,1004-5).
Hetero anelled DCNQI compounds can be synthesized through the corresponding quinones as per Hunig (T. Suzuki at a I, J, Org. Chem, 2001, 66,216-24; N. Martin at al, J. Org. Chem. 1996, 61, 3041-54; K. Kobayashy at al, Chemistry Letters, 1991, 1033-6; K. Kobayashy, K. Takahashi, J. Org. Chem/ . 2000, 65,10 2577-9).

Hetero cyclic quinoide derivatives can be produced as per N, F, Haley, J. C. S. Ghem, Comm. 1979, 1031, F. Weydand. K. Henkel Chem. B. 1943, 76, 818; H. J. Knackmuss Angew. Chem. 15 1973, 85, 16; KFickentscher, Chem. B. 1969, 102, 2378-83, D. E. Burton at al J. Chem, Soc. (C) 1968,1268-73.
Quinoide structures with different residues X, Y were synthesized in different work groups (T. Itoh, N. Tanaka, 20 S. Iwatsuki, Macromolecules 1995, 28, 421-4; J, A. Hyatt, J. Org. Chem. 1983,48 129-31; M. R. Bryce et al, J. Org. Chem. 1992, 57,1690-6; A. Schonberg, E. Singer, Chem. Ber. 1970,103,3871-4; S. Iwatsuki, T. Itoh, H. Itoh Chemistry Letters, 1988, 1187-90; T. Itoh, K. Fujikawa, M. Kubo, J. Org. Chem. 25 1996,' 61, 8329-31; S. Iwatsuki, T. Itoh, T. Sato, T. Higuchi, Macromolecules, 1987, 20, 2651-4; T. Itoh et al Macromole-cule2000, 33, 269-77; B. S. Ong, B. Koeshkerian,, J. Org. Chem. 1984, 495002-3; H. Junek, H. Hambock, B. Hornischer, Mh.Chem.1967, 98, 315-23; P.W.Pastors et al Doklady Akad. SSSR 30 1972, 204, 874-5; A. R. Katritzky et al • Heterocyclic Chem. 1989, 26, 1541-5; N. N. Vorozhtsov, V. A. Barkash, S. A. Anich- kina, Doklady Akad. SSSR 1966,166, 598). Tetraacetyl quinone methane compounds or their reduced forms can be obtained through 1, 4-Benzo quinone and Acetylacetone (J . Jenik, Chemicky prumysl 1985 35/601547, R. J. Wikholm J, Org.
Chem. 1985,50,382-4; E. Bernatek, S. Rams tad Acta Chem. Scand. 1953,7,1351- 6). Ditrifluoracetamides can be manufactured by means of Trifluor acetic acid through 5 aromatic 1,4-Diamrnes (R, Adams, J. M. Stewart J. A. C. S. 1952,20, 3660-4).
Through oxidation with Pb(IV)-acetate the Diimine can be obtained.
Other Diimide or amide structures were produced by B-.C.McKusick at ai J. A. C. S. 1958,80, 2806-15.
Example 1
N,N'-Dicyan-2,5-dichlor~l,4-benzo quinone dl-imine
Suspend 3 units N,N'-Dicyan-2,5-dichlor benzen-l,4-diamine in 200 units of pure acetic acid by stirring at 20°C, add 13 units of lead-(IV)-tetra acetate. Keep stirring

until the entire initial material is oxidized. Suck-up the thrown down yellow/brown product and re-crystelize from Benzene. Yield: 64 % Fp.: 225°C
Example 2
N,N'-Dicyan-2,3,5, 6-tetra fluor-l,4-benzo quinone dl-imine
1 . 5 units of 2,3,5,6-Tetra fluor-l,4-benzo quinone along with 7 , 6 units of Titan terra chloride are transferred in 70 units of Methylene chloride. The formed yellow complex with 7 , 5 u n i t s of Bis-(trimethyle silyl)-carbo di-imide in 15 units of Methylene chloride is brought to reaction at room temperature by stirring and put on ice after 4h. The watery phase is extracted two times with methylene chloride. The united organic phases are dried, filtered with magnesium chloride, constricted in vacuum and thrown down and sucked up again. The obtained solid material is re- crystallized from a mixture of toluene/methyle cycio hexane. Yield: 48%, Pp.: 205°C
1.3. 2-Dioxaborine
As per invention also 1,3,2-Dioxaborine compounds can be deployed for doping of semiconductor organic materials, The 1,3,2-Dioxaborine compounds used as per invention can have the general formula L, GRAPHIC

Formula L
wherein A is a bivalent residue, which can have one or several carbon atoms, which can be partially or fully replaced by hetero atoms, wherein m = 0 or a complete number is greater than 0, for example 1,2,3,4,5,6 or greater, for example, up to 10 or up to 20, and where X is a single digit ligand or two ligands X can form a two-digit ligands. The bridge Am can here have up to 6, up to 10 or up to 20 bridge atoms,

which connect both the 1,3,2- Dioxaborine rings with each other, wherein the bridge atoms can be especially carbon atoms and / or hetero atoms.
The 1,3,2-Dioxaborine compounds used according to invention can have the general formula Li,

Formula LI GRAPHIC
wherein Q is a trivalent residue and in which X is a single digit ligand or where two ligands X together form a two digit ligands.
Further the 1,3,2-Dioxaborine compounds used according to the invention can have the general formula Lll,

Formula LI I
p
Which represents a downfall of the formula L with m == 0, wherein both the 1,3,2-Dioxaborines are however, mesomeric bonded with each other.
Especially, 1,3,2-Dioxaborines recommended here as doping agents can possess the general formulas 30 - 33.


Wherein, in each of the formulas the different X and/or Rl to R3 can be equal or different among themselves
The given symbols mean as follows:
The residue X a single digit ligand with a preferable electronegative trapped atom, like for example Fluor, Alkoxy, Acyloxy, Aryloxy or Aroyloxy, a two digit ligand, whose trapped atoms preferably represent oxygen, which are linked with each other through a bridge with different atom groupings and variable number of bridge atoms, wherein through the bridge preferably a 5 or 6 link ring is produced, wherein at least one atom or all atoms of the bridge are preferably a carbon atom, the residues R1 - R6, each of which can be independent of each other, either hydrogen, a hydrocarbon group, which, if necessary, can have one or several hetero atoms, especially, Alkyl- or Cyclo-alkyle group - with an advantage - which can be partially or fully substituted by Fluor or Chlor, especially perhalogenized, specially preferred perfluorized and which consist of preferably one to six or eight or ten carbon atoms (preferably maximum ten carbon atoms), which are linked with each other either as branched or un-branched, an un-substituted or substituted Aryle group Ar, including hetero aryle group, which can also be substituted with an advantage through halogen, especially fluor or chlor, especially perhalogenized, especially can be perfluorized. but together in a neighboring position at the 1,3,2-Doxaborine structure along with bonding carbon atoms can form an aromatic, hetero aromatic or non-aromatic molecule fragment, like for example a Benzo-, Naphtho-, Anthracene-, Thieno-, Furano-, Benzothiopheno-, Benzofurano-, Indolo-, Carbazolo-, Chinolino-, Tetrahydronaphtho- or Tetrahydrochinolino fragment, wherein these fragments can be substituted in very flexible manner, like for example through Halogens, like Fluor or Chlor, as well as through other groupings containing hetero atoms, like Alkyoxy-, Aryloxy-, dialkylamino or diarylamino

groupings, the grouping A can have either a bond between the 1,3,2- Dioxaborine residues or a bridge with preferably up to ten atoms, wherein the can have carbon atoms or even hetero atoms like for example 0, N, S or P, and wherein the carbon atoms can be replaced partially or fully by hetero atoms. If necessary, the bridge can have several or exclusively non-saturated bridge atoms. The bridge represents preferably, similarly like Q, the conjugation between the 1 , 3, 2-Dioxaborine residues exchanging molecule fragment, for example in a way that all the bridge atoms of the bridge are non- saturated, the grouping Q represents either a trivalent residue like a nitrogen or phosphorus atom, a trialkylene- or triarylene or trihetero arylene amino- or phosphor group. The bridge prior to Q represents preferably a molecule fragment which exchanges the conjugation between the 1 , 3, 2 -Dioxaborine residues.
If the residues X in the compounds of formulas L, LI or Lll, especially in compounds of the formula type 30 - 33 a two digit ligand, then this is preferably the residues of organic dicarbonic acid; like especially oxalic acid or malonic acid, Bernstein acid and Glutaric acid, wherein these dicarbonic acids can be substituted with exception of initially mentioned compounds in their alkylene groupings by alkyi- or Aryle groupings, the residues of aromatic Dicarbonic acids, like Phthal acid and its derivatives substituted in the ring preferably through halogen, organic hydroxyl acids, like Salicylic acid and its ring substituted derivatives, 1-Hydroxy-naphthalin-2-carbon acid,
2-Hydroxy-naphthalin-l-carbon acid, mandelic acid, tartaric acid, benzil acid and its derivatives substituted in the Phenyl residues, around 1, 2A-Dioxyaren or Doxyheteron residue, which are derived from the catechol and its derivatives substituted in the ring or from derivatives condensed benzo residues, but also from 3,4-Dioxythiophenen, these are residues of cyclic Oxodicarbonic acids, like square-, krokon acid or similar.
The groupings A or Q, whose task preferably is the establishment of conjugation between the individual residues,- these bond the 1,3,2-Dioxaborin residues, can have a very large structural multiplicity and represent preferably a bivalent or

trivalent atom grouping, like oxygen, sulfur or nitrogen or several bivalent or trivalent aryl grouping(s) linked with each other in conjugative manner, hetero aryl grouping(s), polyenyle - or Polymethinyle grouping(s), wherein the respective groupings can carry still more substitutes, which can be especially alkyle groups with 1 to 10 carbon atoms, which can be additionally substituted through fluor or chlor, especially perhalogenized or perfluorized, un- substituted or preferably these can also be aryle or hetero aryle groupings modified through fluor or chlor as well as through electron attracting substitutes, wherein the hetero atoms in latter can be preferably oxygen, sulfur or the nitrogen and can occur individually as well as in combination with each other, or can be built-in in suitable bridge groupings, like cycloalkylene groupings or their hetero cyclic Analoga.
If A or Q symbolizes an aryl grouping, then this in case of A preferably one or several of groupings 34-36 and in case of Q one or, if necessary, also several of groupings 37 - 39, wherein these can be substituted through usual substitutes, which preferably carry electronegative trapped atoms, and in the fragments of the type 36 the residues R5 and R6, which can be equal or different, can be either hydrogen, alkyi or fluor and chlor, but preferably also together a carbon atom substituted by n- , iso- or cylco-alkyle groups with 1-10 C-Atoms, wherein in compound 35 or 39 can be preferably a full number between 1 und 4. W can be a trivalent group or a trivalent atom like especially N or P or the group 42, without being restricted to this.

If A or Q symbolizes a Hetaryle group, then these represent preferably in case of A a grouping of general formula 40 or 41, wherein, if necessary,in the group A also introductions can appear combined according to formulas 40 and 41, and in case of Q these represent a grouping of general formula 42, in which the residues R7 or R8 can be any kind of substitutes, like for example Alkyi- Aryl-or Hetero aryl- and halogen orAlkoxy, Arytoxy, Dialkylamino or Diarylamino, and the groupings Zl-

Z6 bivalent Hetero atoms, like preferably oxygen, sulfur or un-substituted or substituted nitrogen or phosphor, and n can be a full number, preferred 20 between 1 and 4 or 6, especially 1,2 or 3.

The compounds of the types 30 - 33 as per invention include also those, for whom the aforesaid bridge groupings can be met even in combination with each other, like this is the case for example for an Oxybiphenylene or Thiophenylene unit as well as an amino triphenylene unit, wherein the link is possible with the respective 1,3,2-Dioxaborine system in any desired position with respect to the Hetero atom, preferably, however, in a 1,4 link. The compounds according to the invention also include those, in which, besides the said bridge groupings A and Q still one more residue trapped at the 1,3,2- Dioxaborin system is involved in the respective bridge grouping, so that compounds of general formulas 43-46 emerge, in which the groupings X and R1 - R3 given above and R4 possess one of the residues R1 - R3 corresponding significance.


43 44 45 46
The symbol K stands for a grouping, which links both the flanking molecule structures containing 13/2- Dioxaborine, preferably linked conjunctive with each other, what is possible, for example through a direct fusion of both the flanking groups or by building an Aryl- or Hetaryl fragment.
The following compounds should visualize as example the 1,3, 2-Dioxaborine which can be suitably deployed as per invention:
The compounds 31f to i represent compounds of the formula type L with m = 0.


The compounds 30g, 31 a to e and 31j represent compounds of the formula type L with m - 1, wherein in case of compound 31 b A is equal to -C(CR1 R2)- and m is equal to 1, wherein in case of compound 31 d and j A is equal to -CR1=CR2- and m is equal to 1.


The compounds 32a and b represent compounds of the formula type LI, The compounds 31k to n and o, p represent compounds of the formula type Lll.
Representation of 1.3.2-Dioxaborine
1,4 -to- (2,2-difluor-4-methyl-l, 3,2-d.ioxaborinyf) -benzol:
F
Hp H H cy
To a solution of A,4-Diacetylbenzol (0,01 Mol) in Acetan-20 hydride (50 ml) at room temperature Bortriflu-orid-Etherate (10 ml) is added drop-wise by stirring. After keeping it overnight the fallen down solids are sucked up and these are washed with Ether. F. 293-298 °C.
5, 7-'Bismethoxy~2r2-diffuor-4-methyl-8- (2f 2-difluor-4-methyl-lf3,2-'dioxaborinyl)- benzo[d]l,3,2-dioxabonn;
F\ / F\ /
H
To a solution of 1,3,5-Trimethoxy-benzol (0,1 Mol) in Acetane hydride (0,9 Mol) at room temperature Bortrifluoride-acetic acid (0.3 mol) is added drop-wise by stirring. After keeping it overnight the fallen down solids are sucked up, washed with Ether and re- crystallized. F. 217-5 219 ° C.
2,2,1, 7-Tetrafuor-2, 7-dihydn>l, 3, 6,8-doxa-2, 7-dibora-pyren:

Ig 5,8-Dihydroxy-l,4-naphtho quinone and 1,5ml BFs-Etherat were heated in dry Toluen for 2 h on the water bed by stirring. After cooling down to room

temperature a red brown crystalline precipitation falls, which can be re-crystallized from dry pure acetic acid. F. 163-165 °C.
2,2,7,7-Tetrafuor-'2, 7-dihydro-l, 3,6,8-doxa-2, 7-dibora-benzo [ejpyren:

lOg Chinizarin and 10 ml BF^Etherate were heated in dry Toluen for 2 h on the water bed by stirring. After cooling to room temperature a red brown crystalline precipitation falls, which can be re- crystallized from dry pure acetic acid. F. 249-251 °C.
2,2,8,8-Tetrafluor-2,8-dihydro-l,3,7,9-tetraoxa-2,8-dibora-perylen

lOg l,Dihydroxy-9,10-anthra quinone and 10 ml BFs-Etherate were heated in dry in the 5- dry Toluen for 2 h on the water bed by stirring.
After cooling down to room temperature a red crystalline precipitation falls, which can be re- crystallized from dry pure acetic acid. F. > 350 °C.
Tris-[4-(2,2 -diffuor-4-met hyl-1,3,2-dioxaborinyl)-phenyl]-amin;


To a solution of Triphenylamine (0,1 Mol) in Acetane hydride (0,9 Mol) at room temperature Bortrifluoride/acetic acid (0,3 Mol) is added drop-wise under stirring. After keeping it overnight the fallen down solids are sucked up, washed with Ether and re-crystallized from pure acetic acid/Nitro methane. F. 305-307 °C.
1,3,5'-Tris-(2,2-difiuor-4-methyH,3,2-dioxabonnyl)-benzol:

To a mixture of Acetane hydride (0,6 Mol) and Bortrifluoride-acefic acid (0,2 Mol) at 45 °C 1, 3 , 5 - 5 Triaceteylbenzol (0,05 Mol) is added slowly by drops while being stirred. The resultant mixture is stirred for another 8 hrs. and then allowed to cool down. The product falling after adding Diethyl ether (100 ml) is sucked up, it is washed with acetic acid and re-crystallized from Nitro methane, F. > 360 0 C .
7- 9-Dimethyl-l,4,6,10-tetraoxa-5-bora-spiro[4. 5]deca-7, 9-dien- 2,3-di.on:

Acetyl acetone (0,1 Mol), Oxalic acid (0,1 Mo!) and Boracic acid (0,1 Mol) are heated in Toluol (200 mL) so long, until a clear solution has emerged and no water repelled any more.
After the cooling the fallen down product is sucked up and washed with Cyclohexan. F. 187-189 °C.
8-Acetyl-7,9-dimethyl-i, 4,6,10-tetraoxa-5-bora-spiro[4. 5]deca-7f 9-dien-2f3-dion:


Triacetyle methane (0,1 Mol) and Bortrifluoride-Etherate (0,15 Mol) are stirred in Ether (200 mL) for 20 hrs. at room temperature. Thereafter the fallen down product is sucked up and washed with Cyclohexan. F. > 250°C.
2,3-6enzo-7,9-bis- (4-cbforphenyl)- 1,4, 6rl0-tetraoxa-5-bora- spiro[4.5]deca-7,9-diene:

Catechol (0,1 Mol), Bis-(4-chlorbenzoyl)-methane (0,115 Mol), and Boracic acid (0,1 Mol) are heated in Toluol (250 mL) until a clear solution has emerged and no water gets repelled any more. After cooling down the fallen down product is sucked up and washed with Cyclohexan. F. 312-315
Matrix materials
In this invention suitable doping agents for organic semi-conducting materials like perforated transport materials 25 HT are described, which are normally used in OLEDs or organic solar cells. The semiconductors are preferably intrinsically perforation guided. For dopants of quinone type as well as those of the Dioxaborine-Type the following can be applicable.
The matrix material can partially (> 10 or > 25 weight-%) or mostly (> 50 weight-% or>75weight- %)) or fully consist of a metal phthalocyanine complex, that is of a Porphyrine complex, especially metal porphyrine complex, an Oligothiophen-, Oligophenyl-, Oligophenyl vinylene or Oligofluoren compound, wherein the oligomere preferably covers 2-500 or more, preferably 2-100 or 2-50 or 2- 10 monomer units.

If necessary the oligomere can also cover > 4, > 6 or > 10 or more monomer units, especially also for the above given ranges, that is for example 4 or 6-10 monomer units, 6 or 10-100 monomer units or 10-500 monomer units. The monomers or oligomers can be substituted or unsubstituted, wherein block or mix polymerides from the said oligomers can occur, from a compound with a triarylamine unit or a Spiro-Bifluore compound, the said matrix materials can also occur in combination with each other, if necessary also in combination with other matrix materials. The matrix materials can have electron pushing substitutes like AlkyI- or Alkoxy residue, which have reduced ionization energy or reduce the ionization energy of matrix materials.
The metal phtalocyanine complexes or porphyrine complexes deployed as matrix material can have a main group metal atom or subordinate group metal atom. Each metal atom Me can be coordinated 4, 5 or 6 times, for example in the form of Oxo-(Me=0), Dioxo- (0=Me=0), Imine-, Di-imine-f Hydroxo-f Dihydroxo- Amino" or Diamino complexes, without being restricted to this. The Phtalocyanine complex or Porphyrine complex can be partially hydrogenated, wherein, however, preferably the mesomeric ring system is not disturbed. The Phtalocyanine complexes can contain as central atom for example Magnesium, Zink, iron, Nickel, cobalt, Magnesium, copper or Vanadyl (~ VO). The same or other metal atoms or oxo metal atoms can be present in case of porphyrine complexes.
Especially such dopable perforated transport materials can be HT arylated Benzidine, for example N,N'-perarylated Benzidine or other Diamine like of the type TPD (wherein one, several or all ofAryl groups can have aromatic Hetero atoms), suitable arylated Starburst compounds like N,N',N"-perarylated Starburst compounds, like the compounds TDATA (wherein one, several or all of Aryl groups can have aromatic Hetero atoms). The Aryl residues can cover especially for each of the above said compounds Phenyl, Naphthyl, Pyridine, Chinoline, Isochinoline, Peridazine, Pyrimidine, Pyrazine, Pyrazol, Imidazol, Oxazol, Furan, Pyrrol, Indol or similar. The phenyl groups of each of the compounds can be replaced partially or fully through Thiophen groups.


TPD TDATA ZnPc
Preferably the used matrix material consists fully of a metal phtalocyanine complex, a Porphyrine complex, a compound with a triaryl amine unit or a Spiro-Bifluorene compound.
Perforation guiding materis can be used, which have semi-conductor properties.
Doping
The doping can follow in such a way that the molecular ratio of matrix molecule to Dopant or in case of oligomer matrix materials the ratio of matrix monomer number to dopant is 1:100000, preferably 1 :1 to 1:10000, especially preferred 1:5 to 1:1000 for example 1:10 to 1:100, for example approx.l;50tol:100 or also 1:25 to 1:50. Evaporation of dopants
The doping of the respective matrix material (here preferably indicated as perforation leading matrix material HT) can be achieved with the dopants to be used according to the Invention through one of the following procedures or combination thereof:
a)Mix evaporation in the vacuum with a source for HT and a source for the dopant.
b)Sequential dumping of HT and dopant followed by diffusion of the dopant through thermal treatment
c)Doping of an HT layer through a solution of dopant followed by evaporation of the solvent through thermal treatment
d)Surface doping of an HT layer through a layer of dopant applied on the surface

The doping can follow in such a way that the dopant is evaporated from a precursor compound, which releases dopants while heating and/ or radiation. The radiation can follow by means of electromagnetic radiation, especially visible light, UV light or IR light, i especially laser light, or even through other radiation types. Through the radiation mainly the heat essential for evaporation can be provided, radiation can be targeted in specific bands of compounds or precursor or compound complexes - to be evaporated - like Charge- Transfer complexes, in order to ease the evaporation of compounds through dissociation of complexes for example through transfer in excited conditions. It is clear that evaporation conditions described below are directed to those without radiation. It is clear that the evaporation conditions described below are based on those without radiation and for comparison purposes uniform evaporation conditions have to be referred to.
As precursor compounds following could be considered for deployment:
a) mixtures or stoichiometric or mix crystalline compounds from the dopant and an inert, non- volatile substance, e.g. a polymer, Molecular sieve, aluminum oxide, silica gel, Oligomers or another organic or inorganic substance with high evaporation temperature, wherein the dopant is bonded mainly through van-der-Waals forces and/or hydrogen bridge bond to this substance.
b) Mixtures or stoichiometric or mix crystalline compound of dopant and a more or less electron donor type non-volatile compound V, wherein a more or less complete charge transfer occurs between the dopant and the compound V, like in Charge-Transfer complexes with more or less electron rich poly- aromatic agents or Hetero aromatic agents or another organic or inorganic substance with high evaporation temperature.
c) Mixture or stoichiometric or mix crystalline compound from the dopant and a
substance, which evaporates together with the dopant and shows equal or higher
ionizing energy like the substance HT to be doped, so that the substance in the
organic matrix material does not for trapping point for holes. Here the substance
according to the invention can also be identical with the matrix material, for

example, a metal phtalocyanine or can represent Benzidine derivative. Other suitable volatile co-Substances, tike hydro-quinone, 1,4- Phenylendiamine or 1-Amino-4-hydroxybenze or other compounds form chinhydrons or other Charge-Transfer complexes.
Electronic component
By using organic compounds as per invention for the production of doped organic semiconductor materials, which especially can be arranged in the form of layers or electrical conducting paths, a variety of electronic components or equipment containing these can be manufactured. Especially, the dopants according to the invention can be used for the manufacturing of organic light emitting diode (OLED), organic solar cells, organic diodes, especially such with high rectification ratio like 103 - 107, preferably 10-4-1O7 or 105 -107 organic field effect transistors. Through the dopants according to the invention the conductivity of the doped layers and/or the improvement of charge carrier injection of contacts in the doped layer can be improved. Especially in case of OLEDs the component can have a pin structure or an inverse structure, without being restricted to this. The use of dopants according to the invention is, however, not restricted to the above said beneficial design example.
Design example
The invention should be explained more in detail on the basis of some design examples. The compounds to be used according to the invention, especially the above components given as examples from the above described material class of quinone or 1,3,2- Dioxaborine, are used now in the following manner as dopants for different perforation conductors, which are used for structuring certain microelectronic or optoelectronic components, like for example for an OLED. Here the 5 dopants can be evaporated simultaneously next to each other with the perforation transport materials of the matrix in the high vacuum (approx. 2 x 10-4Pa) at increased temperatures. A typical substrate evaporation rate for the matrix material is 0.2 nm/s (density approx. 1 .5 g/cm3). The evaporation rates for the dopants can vary between 0.001 and 0.5 nm/s at same assumed density, according

to the desired doping ratio. Below given are the evaporation temperatures of the compounds in a substrate evaporation equipment, wherein F4TCNQ shows under otherwise identical conditions an evaporation temperature of 80°C to repel at same given time unit (e.g. five seconds) a same layer thickness (e.g. 1 nm) on the substrate, like the dopants used according to the invention.
In the following examples the current readings were taken across a 1 mm long and about 0. 5 mm wide current path made of doped HT material at IV. Under these conditions ZnPc practically does not conduct any electrical current,
Example 1
Doping of ZnPc with N, N' -Dicyan-2,3,5,6-tetrafluoro-l, 4 (F4DCNQI)
The evaporation temperature T(evap.) is 85°C. Both the components Matrix and
Dopant were vaporized in a ratio of 50:1 in the vacuum. The conductivity here is 2.4
47
x 10-2 S/cm.



Example 2
Doping of ZnPc quinone diimin with Nf N-Dicyan-2, 5-dichloro-l, 4-
(C12DCNQI)
The evaporation temperature T(evap.) is 114°C. The ratio of both the compounds in
the vaporized layer is 1:50 in favor of the matrix, In the layer a conductivity of 1.0 x
10-2 S/cm was measured.



Example 3
Doping of ZnPc with N/N'-Dicyan^S-dichloro-S^-difluoro-l^-quinone diimin
(C12F2DCNQI)
49
The evaporation temperature T(evap.) is 1 1 8 ° C. The layer was vaporized in the ratio 1:25 (DopantMatrix) in the vacuum. Here a conductivity of 4.9xl0'4 S/cm was



Example 4
Doping of ZnPc with N,N'-Dicyan-2,3,5/6,7,8-hexafiuoro-l, 4-15 naphtho quinone diimin (F6DCNNQ1)
The evaporation temperature T(evap.) is 122° C . Dopant and Matrix were vaporized in the ratio 1:25 on the carrier in the vacuum. Here a conductivity of 2xl0"3 S/cm was reached.


Example 5
Doping o ZnPc with l,4,5,8-Tetrahydro-l,4,5,8-tetrathia 2, 3,0/7-tetra cyanoanthra
quinone (CN4TTAQ).
The evaporation temperature T(evap.) is 170°C. The layer was vaporized in the
ratio 1:25 (Dopant: Matrix) in the vacuum.
Here a conductivity of 4.5 x 10- 4 S/cm was measured.

Example 6
Doping of ZnPcmit 2,2,7;7- Tetrafluor-2,7-dihydro-l, 3,6,8- doxa-2, 7-dibora-pentachlorobenzo [ejpyren.
51

The evaporation temperature T(evap.) is 1 4 00 C. The layer was vaporized in the ratio 1:25 (Dopant: Matrix) in the vacuum. Here a conductivity of 2,8 xlO5 S/cm was measured.


WE CLAIM:
1. A process for Doping organic semiconductor matrix material with an organic
mesomeric compound as organic dopant which is a quinone or quinone
derivatives for changing its electrical properties ease handling the production
& increasing long term stability, comprising:
i) selecting the matrix material to be doped and the dopant in the ratio of 1:1
to 1:10,000
ii) evaporating the dopants from a process or compound applying
heat/radiation in either of the following ways for desired doping;
a) mix evaporation in vacuum with a source for matrix material and a source for the dopant.
b) sequential dumping of the matrix material and dopant followed by diffusion of the dopant through thermal treatment.
c) doping of the matrix material layer through a solution of dopant followed by evaporation of the solvent through thermal treatment.
d) Surface doping of the matrix material layer of dopant applied on the surface.

2. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 1, wherein an organic mesomeric compound as organic dopant for doping of an organic semiconductor matrix material for changing the electrical properties of the same is characterized by the fact that the mesomeric compound is a quinone or quinone derivative or a 1,3,2-Dioxaborin derivative and that the mesomeric compound under same evaporation conditions shows a lower volatility than Tetra-fluoro-tetra-cyano-quinone-dimethane (F4TCNQ).
3. A process for doping organic semiconductors matrix material as claimed in claim 1, wherein in case of oligomer materix materials the ratio of matrix monomer number to dopant is 1:10,000, preferably 1:1 to 1:10,000, especially preferred 1:5 to 1:1,000, i.e 1:10 to 1:100 or 1:50 to 1:100 or 1:25 to 1:50.

4. A process as claimed in claim 1, wherein the source of radiation applied for evaporation of dopant is electromagnetic radiation, especially visible light UV light or 1R light or laser light.
5. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 2, wherein the mesomeric Quinoide compound shows the general formula






wherein the Quinode or aromatic ring can be substituted or un-substituted (R=H) or anelled with at least one aromatic ring, wherein -M- is a bivalent atom or a group with a bivalent bridge atom and wherein = T, = 0, =V, -X, =Y or =Z are double bonded atoms or atom groups with mesomeric and/or inductive attracting residues, and wherein ZB is a two-bond atom or a two-bond multi-atom bridge.
6. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 1, wherein the symbols have following meaning:
-M- is -0-, -S-, -NR- or - C (=Z) -, preferably -0-f -S- or -NR- or preferably - C (-Z)-, and
= T, = U r' =V, =W, =X, =Y or =Z are equal or different and are selected from the group consisting of


Wherein the substitute AA is selected from the group consisting of


Wherein AA along with other residue R of the compound can form a multi-link ring,
wherein Z in the formulas VIII; IX or X represents a direct bond, or a single atom or multi-atom group, which can saturated or non-saturated, and wherein A, B, D, E, F, G, H, K in the formulas XX and XXI is equal or different and it is selected from the group =N-, =P-, or =CR-, wherein R can represent a hydrogen atom or a residue.
7. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 1, wherein compound has 2, 3, 4, 5 or 6 Quinoide ring systems each one with 5 or 6 carbon atoms, which can be replaced at least partially through hetero atoms.
8. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 1, wherein at least 2, several or all of the Quinoide ring systems are anelled under mesomeric link to a larger Quinoide system or are linked mesomeric with each other through an un-saturated bridge.
9. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 2, wherein the compound 1, 2, 3, 4, 5 or 6 contain 1,3,2 - Dioxaborin rings.

10. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 1, wherein at least 2, several or all of 1,3,2-dioxaborin rings are anelled under mesomeric and / or aromatic link, if necessary, anelled through more aromatic rings or mesomeric linked with each other through an unsaturated bridge.
11. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 1, wherein the mesomeric 1, 3, 2 dioxaborin compound has the general formula LI, wherein A is a bivalent residue, which can have one or several carbon atoms, which can be partially or fully replaced through hetero atoms, wherein m = 0 or it is a full number greater than 0, and wherein X is a single digit ligands, or that the mesomeric 1,3,2-pioxaborin compound has the general formula LI.

Wherein Q is a trivalent residue and
Wherein X is a single digit ligand, wherein two ligands X can form one
two-digit ligands.
12. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 9, wherein that A is selected from the group consisting of



and -(C(R1)=C(R2)-) n with n equal to 1, 2, 3, 4, 5 or 6 and -NR1-, wherein Z1, Z2 and Z3 are bi or trivalent atoms, and wherein one or both the residues Rl, R2 can form a ring with one or both the neighboring 1,3,2-Dioxaborin rings.
13. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 2, wherein that Q is selected from the group consisting of

nitrogen, N(Aryl)3, wherein Aryl covers Heteroaryl, Phosphor and P(Aryl)3, wherein Aryl covers Heteroaryl, wherein Z4, Z5 and Z6 are trivalent atoms, and wherein W is a trivalent atom or a trivalent atom group, wherein n can be equal to 0,1, 2,3 or 4.
14. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 13, wherein the mesomeric 1, 3, 2 -Dioxaborin compound has the general formula LII, wherein X is a single digit ligand, wherein two ligands X can for one two-digit ligands and wherein R4, R5 are organic residues, which can have 1,3,2-Dioxaborin rings.
15. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 14, wherein the compound has 1, 2,3,4, 5 or 6 Aryl residues, which are anelled with each other or with one or several Quinoide Systems or with one or several 1, 3, 2-Dioxaborin rings of the compound.
16. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 15, wherein the compound is one of the following compounds: N,N'-Dicyan-2, 3, 5, 6-tetrafluoro-l, 4-quinone di¬imine N,N'-Dicyan-2, 5-dichloro-l, 4-quinone di-imine, N, Nf-Dicyan-2, 5-


dichloro-3, 6-difluoro-l, 4-quinone di-imine, N,N'-Dicyan-2, 2-3, 5, 6, 7, 8 -hexaf luoro-1, 4-naphtho quinone di-imine, 1, 4, 5, 8-Tetrahydro-l, 4, 5, 8-tetrathia-2, 3, 6, 7-tetracyanoanthra quinone and/or 2, 2, 7, 7-Tetrafluor-2, 7-dihydro-1,3, 6, 8-doxa-2r7-d.ibora pentachloro-benzo[ e ] pyren.
17. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 1, wherein the matrix material is perforated conductive.
18. Process for Doping of organic semiconductor with Quinone diimine derivatives as claimed in claim 1, wherein the matrix material consists partially or fully of a metal phtalocyanine complex, a Porphyrine complex, an Oligothiophen compound, Oligophenyl compound, Oligophenylene vinyl compound, oligotuor compound, a Pentazen compound a compound with a Triarylamine unit and/or a Spiro-Bifluoren compound.
Dated this 27th day of March, 2004.
ASEAN SAARC PATENT & TRADE MARK SERVICES
AGENT FOR NOVALED GMBH


Documents:

382-mum-2004-cancelled pages(22-08-2007).pdf

382-mum-2004-claims(granted)-(22-08-2007).pdf

382-mum-2004-claims(granted)-(22-8-2007).doc

382-mum-2004-correspondence (22-08-2007).pdf

382-mum-2004-correspondence(ipo)-(14-03-2005).pdf

382-mum-2004-form 1(08-02-2005).pdf

382-mum-2004-form 1(22-08-2007).pdf

382-mum-2004-form 13(08-07-2005).pdf

382-mum-2004-form 13(22-08-2007).pdf

382-mum-2004-form 19(29-03-2004).pdf

382-mum-2004-form 2(granted)-(22-08-2007).pdf

382-mum-2004-form 2(granted)-(22-8-2007).doc

382-mum-2004-form 3(08-02-2005).pdf

382-mum-2004-form 3(22-08-2007).pdf

382-mum-2004-form 3(29-03-2004).pdf

382-mum-2004-form 5(08-02-2005).pdf

382-mum-2004-form 5(22-08-2007).pdf

382-mum-2004-power of attorney (29-03-2004).pdf


Patent Number 210687
Indian Patent Application Number 382/MUM/2004
PG Journal Number 42/2008
Publication Date 17-Oct-2008
Grant Date 08-Oct-2007
Date of Filing 29-Mar-2004
Name of Patentee NOVALED AG
Applicant Address TATZBERG 49, 01307 DRESDEN, GERMANY.
Inventors:
# Inventor's Name Inventor's Address
1 KUEHL OLAF MITTELSTRASSE 10, 04416 MARKKLEEBERG, GERMANY.
2 HARTMANN HORST WOLLNERSTER 4, 01326 DRESDEN, GERMANY.
3 ZEIKA OLFA GARTENSTR.2C, 06727 THEI EN GERMANY.
4 PEFIFFER MARTIN ALTTRACHAU 4, 01139 DRESDEN GERMANY.
5 ZHENG YOUXUAN HOCHSCHULSTRASSE 48/17-12, 01069 DRESDEN, GERMANY.
PCT International Classification Number H01L 35/24
PCT International Application Number N/A
PCT International Filing date
PCT Conventions:
# PCT Application Number Date of Convention Priority Country
1 103 57 044.6 2003-12-04 Germany